Datasheet > BTA1300A3

BTA1300A3

更新时间： 2024-11-27 04:09:31

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		晶体晶体管
页数	文件大小	规格书
4页	157K
描述
Low VCE(SAT) PNP Epitaxial Planar Transistor

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数据手册

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BTA1300A3 数据手册

Spec. No. : C816A3

Issued Date : 2003.04.15

Revised Date :

CYStech Electronics Corp.

Page No. : 1/4

Low V_CE(SAT)PNP Epitaxial Planar Transistor

BTA1300A3

Description

The BTA1300A3 is designed especially for use in strobo flash and medium power amplifier

applications.

Features

• High DC current gain and excellent hFE linearity.

HFE(1)=140—600(VCE=-1V,IC=-0.5A)

HFE(2)=60(min), 120(typ.)(VCE=-1V,IC=-4A)

• Low Saturation Voltage

VCE(sat)=-0.5V(max)(IC=-2A,IB=-50mA).

Symbol

BTA1300A3

TO-92

B：Base

C：Collector

E：Emitter

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current(DC)

Collector Current(Pulsed)(^{Note 1)}

Power Dissipation

VCBO

VCES

VCEO

VEBO

-20

-10

-6

-2

ICP

-5

750

150

-55~+150

°C

Junction Temperature

Storage Temperature

Tstg

Note 1: Single pulse, Pw≤10ms,Duty Cycle≤30%.

BTA1300A3

CYStek Product Specification

12 3 4

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