Datasheet > BT139-60DG

BT139-60DG

更新时间： 2022-10-17 10:40:19

品牌	Logo	应用领域
恩智浦 - NXP		可控硅
页数	文件大小	规格书
14页	187K
描述
4Q Triac High blocking voltage capability

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BT139-60DG 数据手册

BT139-600E

NXP Semiconductors

4Q Triac

6. Characteristics

Table 6.

Symbol

Characteristics

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

I_GTgate trigger current

V_D= 12 V; I_T= 0.1 A; T2+ G+;

T_j= 25 °C; see Figure 7

2.5

V_D= 12 V; I_T= 0.1 A; T2+ G-;

T_j= 25 °C; see Figure 7

V_D= 12 V; I_T= 0.1 A; T2- G-;

T_j= 25 °C; see Figure 7

V_D= 12 V; I_T= 0.1 A; T2- G+;

T_j= 25 °C; see Figure 7

3.2

I_L

latching current

V_D= 12 V; I_G= 0.1 A; T2+ G+;

T_j= 25 °C; see Figure 8

V_D= 12 V; I_G= 0.1 A; T2+ G-;

T_j= 25 °C; see Figure 8

V_D= 12 V; I_G= 0.1 A; T2- G-;

T_j= 25 °C; see Figure 8

V_D= 12 V; I_G= 0.1 A; T2- G+;

T_j= 25 °C; see Figure 8

5.5

I_H

holding current

V_D= 12 V; T_j= 25 °C; see Figure 9

I_T= 20 A; T_j= 25 °C; see Figure 10

V_T

V_GT

on-state voltage

gate trigger voltage

1.2

0.7

1.6

1.5

V_D= 12 V; I_T= 0.1 A; T_j= 25 °C;

see Figure 11

V_D= 400 V; I_T= 0.1 A; T_j= 125 °C

V_D= 402 V; T_j= 125 °C

0.25

0.4

0.1

I_D

off-state current

0.5

Dynamic characteristics

dV_D/dt rate of rise of off-state voltage

V_DM= 402 V; T_j= 125 °C;

exponential waveform; gate open

circuit

V/µs

µs

t_gt

gate-controlled turn-on time

I_TM= 20 A; V_D= 600 V;

I_G= 100 mA; dI_G/dt = 5 A/µs

BT139-600E

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Product data sheet

Rev. 04 — 24 February 2011

7 of 14

1...4 5 678 9 10...14

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