Datasheet > BT139-60DG

BT139-60DG

更新时间： 2022-10-17 10:40:19

品牌	Logo	应用领域
恩智浦 - NXP		可控硅
页数	文件大小	规格书
14页	187K
描述
4Q Triac High blocking voltage capability

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数据手册

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BT139-60DG 数据手册

BT139-600E

NXP Semiconductors

4Q Triac

5. Thermal characteristics

Table 5.

Symbol

R_th(j-mb)

Thermal characteristics

Parameter

Conditions

Min

Typ

Max

1.7

1.2

Unit

K/W

thermal resistance from junction to

mounting base

half cycle; see Figure 6

full cycle; see Figure 6

full cycle

R_th(j-a)

thermal resistance from junction to

ambient

001aab098

th(j-mb)

(K/W)

(1)

(2)

−1

−2

−3

−5

−4

−3

−2

−1

(s)

Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width

BT139-600E

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 04 — 24 February 2011

6 of 14

1...3 4 567 8 9...14

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