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BSP75G PDF预览

BSP75G

更新时间: 2024-02-06 14:22:52
品牌 Logo 应用领域
捷特科 - ZETEX 开关
页数 文件大小 规格书
8页 382K
描述
60V self-protected low-side IntelliFETTM MOSFET switch

BSP75G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-223
包装说明:SOP,针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.55
内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
长度:6.5 mm功能数量:1
端子数量:4输出电流流向:SINK
标称输出峰值电流:0.7 A封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:1.8 mm
标称供电电压:12 V表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:2.3 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40断开时间:20 µs
接通时间:20 µs宽度:3.5 mm
Base Number Matches:1

BSP75G 数据手册

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BSP75G  
Electrical characteristics (at Tamb = 25°C unless otherwise stated)  
Parameter  
Symbol  
Min. Typ. Max. Unit Conditions  
Static characteristics  
Drain-source clamp voltage  
V
60  
1
70  
0.1  
3
75  
3
V
A  
A  
V
I =10mA  
D
DS(AZ)  
Off-state drain current  
Off-state drain current  
I
I
V
V
V
=12V, V =0V  
IN  
DSS  
DSS  
DS  
DS  
DS  
15  
=32V, V =0V  
IN  
(*)  
V
2.1  
0.7  
1.5  
4
=V , I =1mA  
GS D  
Input threshold voltage  
IN(th)  
Input current  
Input current  
Input current  
I
I
I
1.2  
2.7  
7
mA V =+5V  
IN  
IN  
IN  
IN  
mA V =+7V  
IN  
mA V =+10V  
IN  
Static drain-source on-state  
resistance  
Static drain-source on-state  
resistance  
R
R
520  
675  
mV =+5V, I =0.7A  
IN D  
DS(on)  
DS(on)  
385  
550  
mV =+10V, I =0.7A  
IN D  
(†)  
I
I
0.7  
2
1.1  
3
1.75  
4
A
A
V =+5V, V >5V  
IN DS  
D(LIM)  
Current limit  
(†)  
V =+10V, V >5V  
D(LIM)  
IN  
DS  
Current limit  
Dynamic characteristics  
Turn-on time (V to 90% I )  
t
2.2  
13  
10  
20  
20  
10  
s  
s  
R =22, V =12V,  
L DD  
IN  
D
on  
V =0 to +10V  
IN  
Turn-off time (V to 90% I )  
t
R =22, V =12V,  
L DD  
IN  
D
off  
V =+10V to 0V  
IN  
-dVDS/dton  
dV /dt  
Slew rate on (70 to 50% V  
)
)
10  
V/s R =22, V =12V,  
L DD  
DD  
DD  
V =0 to +10V  
IN  
Slew rate off (50 to 70% V  
3.2  
V/s RL=22, VDD=12V,  
DS  
off  
VIN=+10V to 0V  
(‡)  
Protection functions  
Required input voltage for  
V
4.5  
V
PROT  
over temperature protection  
Thermal overload trip  
temperature  
T
150  
175  
10  
°C  
°C  
JT  
Thermal hysteresis  
Unclamped single pulse  
inductive energy Tj=25°C  
Unclamped single pulse  
inductive energy Tj=150°C  
Inverse diode  
E
E
550  
200  
mJ  
I
I
=0.7A, V =32V  
DD  
AS  
D(ISO)  
mJ  
=0.7A, V =32V  
AS  
D(ISO)  
DD  
Source drain voltage  
V
1
V =0V, -I =1.4A  
IN D  
SD  
NOTES:  
(*) Protection features may operate outside spec for VIN<4.5V.  
(†) The drain current is limited to a reduced value when VDS exceeds a safe level.  
(‡) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the  
datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed  
for continuous, repetitive operation.  
Issue 4 - May 2006  
© Zetex Semiconductors plc 2006  
5
www.zetex.com  

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