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BSP762-T

更新时间: 2024-02-22 15:16:52
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
16页 216K
描述
?100mΩ. 5-34V 2.4A. P-DSO-8?

BSP762-T 技术参数

生命周期:Transferred包装说明:SOP,
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.32
Is Samacsys:N内置保护:OVER CURRENT; OVER VOLTAGE; THERMAL
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PDSO-G8
功能数量:1端子数量:8
输出电流流向:SOURCE标称输出峰值电流:2.4 A
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified最大供电电压:34 V
最小供电电压:5 V标称供电电压:13.5 V
表面贴装:YES技术:MOS
端子形式:GULL WING端子位置:DUAL
断开时间:230 µs接通时间:170 µs
Base Number Matches:1

BSP762-T 数据手册

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BSP 762 T  
Smart Power High-Side-Switch  
Product Summary  
Features  
Overvoltage protection  
Operating voltage  
41  
V
Overload protection  
Current limitation  
V
V
bb(AZ)  
bb(on)  
5...34 V  
On-state resistance  
Nominal load current  
100  
2
R
m
A
Short circuit protection  
Thermal shutdown with restart  
ON  
I
L(nom)  
Overvoltage protection (including load dump)  
Fast demagnetization of inductive loads  
Reverse battery protection with external resistor  
CMOS compatible input  
Loss of GND and loss of V protection  
bb  
ESD - Protection  
Very low standby current  
Application  
All types of resistive, inductive and capacitive loads  
µC compatible power switch for 12 V and 24 V DC applications  
Replaces electromechanical relays and discrete circuits  
General Description  
N channel vertical power FET with charge pump, ground referenced CMOS compatible input,  
monolithically integrated in Smart SIPMOS technology. Fully protected by embedded  
protection functions.  
2000-02-21  
Page 1  

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