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BS980-GS18 PDF预览

BS980-GS18

更新时间: 2024-11-28 22:22:31
品牌 Logo 应用领域
威世 - VISHAY PIN二极管射频
页数 文件大小 规格书
3页 896K
描述
RF PIN Diode

BS980-GS18 技术参数

是否无铅: 不含铅生命周期:Obsolete
零件包装代码:MELF包装说明:O-LELF-R2
针数:2Reach Compliance Code:unknown
HTS代码:8541.10.00.80风险等级:5.84
Is Samacsys:N二极管类型:PIN DIODE
JESD-30 代码:O-LELF-R2端子数量:2
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
表面贴装:YES端子形式:WRAP AROUND
端子位置:ENDBase Number Matches:1

BS980-GS18 数据手册

 浏览型号BS980-GS18的Datasheet PDF文件第2页浏览型号BS980-GS18的Datasheet PDF文件第3页 
BA980  
Vishay Semiconductors  
RF PIN Diode  
Features  
Wide frequency range 10 MHz to 1 GHz  
Applications  
96 12009  
Current controlled HF resistance in adjustable  
attenuators  
Order Instruction  
Type  
Ordering Code  
Remarks  
BA980 – GS08  
BS980 – GS18  
Tape and Reel ( 2.500 pcs )  
Tape and Reel ( 10.000 pcs )  
BA980  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Reverse voltage  
Test Conditions  
Type  
Symbol  
Value  
30  
Unit  
V
V
R
Forward current  
Junction temperature  
Storage temperature range  
I
T
T
stg  
50  
125  
–55...+125  
mA  
C
C
F
j
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
on PC board 50mmx50mmx1.6mm  
Symbol  
Value  
500  
Unit  
K/W  
R
thJA  
Electrical Characteristics  
T = 25 C  
j
Parameter  
Test Conditions  
I =20mA  
Type  
Symbol Min  
Typ Max Unit  
Forward voltage  
Reverse current  
Diode capacitance  
Differential forward  
resistance  
V
F
1
V
F
V =30 V  
I
R
50  
0.5  
60  
nA  
pF  
R
f=100MHz, V =0  
C
D
R
f=100MHz, I =1.5mA  
r
40  
5
F
f
Reverse impedance  
Minority carrier lifetime I =10mA, I =10mA  
f=100MHz, V =0  
z
k
s
R
r
4
F
R
www.vishay.com  
1 (3)  
Document Number 85636  
Rev. 1, 26-Mar-01  

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