Datasheet > BS62LV4008SC-55

BS62LV4008SC-55

更新时间： 2022-12-14 03:57:07

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
10页	374K
描述
Very Low Power/Voltage CMOS SRAM 512K X 8 bit

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数据手册

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BS62LV4008SC-55 数据手册

BSI

BS62LV4008

AC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85^oC )

WRITE CYCLE

JEDEC

PARAMETER

NAME

CYCLE TIME : 55ns

(Vcc = 3.0~3.6V)

MIN. TYP. MAX.

CYCLE TIME : 70ns

(Vcc = 2.7~3.6V)

MIN. TYP. MAX.

PARAMETER

DESCRIPTION

Write Cycle Time

UNIT

NAME

t_AVAX

t_E1LWH

t_AVWL

t_WC

t_CW

t_AS

Chip Select to End of Write

Address Set up Time

t_AVWH

t_WLWH

t_WHAX

t_WLOZ

t_DVWH

t_WHDX

t_GHOZ

t_WHQX

t_AW

t_WP

t_WR

t_WHZ

t_DW

t_DH

Address Valid to End of Write

Write Pulse Width

Write Recovery Time

(CE , WE)

Write to Output in High Z

Data to Write Time Overlap

Data Hold from Write Time

Output Disable to Output in High Z

Endot Write to Output Active

t_OHZ

t_OW

SWITCHING WAVEFORMS (WRITE CYCLE)

WRITE CYCLE1 ⁽¹⁾

ADDRESS

(3)

(11)

(5)

(2)

(4,10)

OHZ

D _OUT

D _IN

Revision 1.1

Jan. 2004

R0201-BS62LV4008

1...3 4 567 8 9 10

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