Datasheet > BS62LV4008SC-55

BS62LV4008SC-55

更新时间： 2022-12-14 03:57:07

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
10页	374K
描述
Very Low Power/Voltage CMOS SRAM 512K X 8 bit

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BS62LV4008SC-55 数据手册

BSI

BS62LV4008

READ CYCLE2 ^(1,3,4)

ACS

(5)

CHZ

(5)

CLZ

D _OUT

READ CYCLE3 ^(1,4)

ADDRESS

OLZ

(5)

ACS

OHZ

(1,5)

CHZ

(5)

CLZ

D _OUT

NOTES:

1. WE is high in read Cycle.

2. Device is continuously selected when CE = V^IL

3. Address valid prior to or coincident with CE transition low.

4. OE = V^IL

5. The parameter is guaranteed but not 100% tested.

Revision 1.1

Jan. 2004

R0201-BS62LV4008

1 2 3 456 7 8...10

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型号	品牌	获取价格	描述	数据表
BS62LV4008SC70	BSI	获取价格	Standard SRAM, 512KX8, 70ns, CMOS, PDSO32
BS62LV4008SC-70	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 8 bit
BS62LV4008SCG55	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 8 bit
BS62LV4008SCG70	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 8 bit
BS62LV4008SCP55	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 8 bit
BS62LV4008SCP70	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 8 bit
BS62LV4008SI	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 8 bit
BS62LV4008SI55	BSI	获取价格	Standard SRAM, 512KX8, 55ns, CMOS, PDSO32
BS62LV4008SI-55	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 8 bit
BS62LV4008SI70	BSI	获取价格	Standard SRAM, 512KX8, 70ns, CMOS, PDSO32