是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | TSSOP, TSSOP32,.56,20 | Reach Compliance Code: | unknown |
风险等级: | 5.92 | Is Samacsys: | N |
最长访问时间: | 55 ns | I/O 类型: | COMMON |
JESD-30 代码: | R-PDSO-G32 | JESD-609代码: | e0 |
内存密度: | 2097152 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 8 | 湿度敏感等级: | 3 |
端子数量: | 32 | 字数: | 262144 words |
字数代码: | 256000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 256KX8 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSSOP |
封装等效代码: | TSSOP32,.56,20 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 并行/串行: | PARALLEL |
电源: | 3/5 V | 认证状态: | Not Qualified |
最小待机电流: | 1.5 V | 子类别: | SRAMs |
最大压摆率: | 0.055 mA | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子节距: | 0.5 mm | 端子位置: | DUAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BS62LV2006STI-55 | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
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BS62LV2006STI70 | BSI |
获取价格 |
Very Low Power CMOS SRAM 256K X 8 bit |
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BS62LV2006STI-70 | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
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BS62LV2006STIG55 | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
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BS62LV2006STIG70 | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
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BS62LV2006STIP55 | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
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BS62LV2006STIP70 | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
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BS62LV2006TC | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
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BS62LV2006TC55 | BSI |
获取价格 |
Very Low Power CMOS SRAM 256K X 8 bit |
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BS62LV2006TC-55 | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
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