Datasheet > BS62LV1024STI

BS62LV1024STI

更新时间： 2024-11-22 22:39:39

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
11页	384K
描述
Very Low Power/Voltage CMOS SRAM 128K X 8 bit

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中文翻译

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数据手册

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BS62LV1024STI 数据手册

Very Low Power/Voltage CMOS SRAM

128K X 8 bit

BSI

BS62LV1024

DESCRIPTION

FEATURES

• Wide Vcc operation voltage : 2.4V ~ 5.5V

• Very low power consumption :

The BS62LV1024 is a high performance, very low power CMOS

Static Random Access Memory organized as 131,072 words by 8 bits

and operates from a wide range of 2.4V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current of

0.02uA and maximum access time of 70ns in 3V operation.

Easy memory expansion is provided by an active LOW chip

enable (CE1), an active HIGH chip enable (CE2), and active LOW

output enable (OE) and three-state output drivers.

Vcc = 3.0V C-grade : 20mA (Max.) operating current

I- grade : 25mA (Max.) operating current

0.02uA (Typ.) CMOS standby current

Vcc = 5.0V C-grade : 35mA (Max.) operating current

I- grade : 40mA (Max.) operating current

0.4uA (Typ.) CMOS standby current

• High speed access time :

-70

70ns (Max.) at Vcc = 3.0V

The BS62LV1024 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

The BS62LV1024 is available in DICE form, JEDEC standard 32 pin

450mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP, 8mmx13.4mm

STSOP and 8mmx20mm TSOP.

• Data retention supply voltage as low as 1.5V

^{• E}P^asR^yO^exD^paUⁿC^siT^onF^wA^ithM^CIL^E2Y^{, CE1, and OE options}

P O W E R D IS SIPATIO N

S P E E D

P R O D U C T

FAM ILY

O P E R ATIN G

V cc

S tandb y

O perating

(ns)

P K G TY P E

(Icc, M ax)

TE M P E R ATU R E

R AN G E

(IccS B 1, M ax)

V cc=3V

V cc=5V

V cc=3V V cc=5V V cc=3V

B S 62LV 1024S C

B S 62LV 1024TC

B S 62LV 1024S TC

B S 62LV 1024P C

B S 62LV 1024JC

B S 62LV 1024D C

B S 62LV 1024SI

B S 62LV 1024TI

B S 62LV 1024S TI

B S 62LV 1024PI

B S 62LV 1024JI

B S 62LV 1024D I

S O P -32

TS O P -32

S TS O P -32

P D IP -32

S O J-32

D IC E

S O P -32

TS O P -32

S TS O P -32

P D IP -32

S O J-32

D IC E

+0^OC to +70 ^OC 2.4V ~ 5.5V

3.0uA

1.0uA

1.5uA

35m A

20m A

-40^OC to +85 ^OC 2.4V ~ 5.5V

5.0uA

40m A

25m A

PIN CONFIGURATIONS

BLOCK DIAGRAM

A16

A14

A12

VCC

A15

CE2

A13

A12

Address

Memory Array

1024 x 1024

A14

1024

BS62LV1024SC

BS62LV1024SI

BS62LV1024PC

BS62LV1024PI

BS62LV1024JC

BS62LV1024JI

Row

A16

A15

A13

Input

A11

Decoder

Buffer

A10

CE1

DQ7

DQ6

DQ5

DQ4

DQ3

A11

DQ0

DQ1

DQ2

GND

1024

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

Data

Column I/O

Input

Buffer

Write Driver

Sense Amp

Data

A11

128

Column Decoder

Output

Buffer

A10

CE1

DQ7

DQ6

DQ5

DQ4

DQ3

GND

DQ2

DQ1

DQ0

A13

CE2

A15

VCC

BS62LV1024TC

CE2

CE1

Vdd

Gnd

BS62LV1024STC

BS62LV1024TI

BS62LV1024STI

Control

Address Input Buffer

A16

A14

A12

A5 A4 A3 A2 A1 A0 A10

Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.

Revision 2.2

April 2001

R0201-BS62LV1024

12 3 4 5 6 7...11

中文翻译

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与BS62LV1024STI相关器件

型号	品牌	获取价格	描述	数据表
BS62LV1024STI70	BSI	获取价格	Standard SRAM, 128KX8, 70ns, CMOS, PDSO32
BS62LV1024STIG70	BSI	获取价格	Standard SRAM, 128KX8, 70ns, CMOS, PDSO32
BS62LV1024STIP70	BSI	获取价格	Standard SRAM, 128KX8, 70ns, CMOS, PDSO32
BS62LV1024TC	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 128K X 8 bit
BS62LV1024TC70	BSI	获取价格	Standard SRAM, 128KX8, 70ns, CMOS, PDSO32
BS62LV1024TCG70	BSI	获取价格	Standard SRAM, 128KX8, 70ns, CMOS, PDSO32
BS62LV1024TCP70	BSI	获取价格	Standard SRAM, 128KX8, 70ns, CMOS, PDSO32
BS62LV1024TI	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 128K X 8 bit
BS62LV1024TI70	BSI	获取价格	Standard SRAM, 128KX8, 70ns, CMOS, PDSO32
BS62LV1024TIG70	BSI	获取价格	Standard SRAM, 128KX8, 70ns, CMOS, PDSO32

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