Datasheet > BS616LV2016EAP55

BS616LV2016EAP55

更新时间： 2024-01-10 15:00:20

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
10页	168K
描述
SRAM

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技术参数
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BS616LV2016EAP55 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

BS616LV2016EAP55 数据手册

Very Low Power CMOS SRAM

128K X 16 bit

BS616LV2016

Pb-Free and Green package materials are compliant to RoHS

n FEATURES

ŸWide V_CCoperation voltage : 2.4V ~ 5.5V

n DESCRIPTION

The BS616LV2016 is a high performance, very low power CMOS

Static Random Access Memory organized as 131,072 by 16 bits and

operates form a wide range of 2.4V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques provide both

high speed and low power features with typical CMOS standby

current of 0.1uA at 3.0V/25^OC and maximum access time of 55ns at

3.0V/125^OC.

ŸVery low power consumption :

V_CC= 3.0V

V_CC= 5.0V

Operation current : 30mA (Max.) at 55ns

2mA (Max.) at 1MHz

Standby current : 0.1uA (Typ.) at 25 ^OC

Operation current : 62mA (Max.) at 55ns

8mA (Max.) at 1MHz

Standby current : 0.6uA (Typ.) at 25^OC

ŸHigh speed access time :

Easy memory expansion is provided by an active LOW chip enable

(CE) and active LOW output enable (OE) and three-state output

drivers.

-55

-70

55ns(Max.) at V_CC=3.0~5.5V

70ns(Max.) at V_CC=2.7~5.5V

ŸAutomatic power down when chip is deselected

ŸEasy expansion with CE and OE options

ŸI/O Configuration x8/x16 selectable by LB and UB pin.

ŸThree state outputs and TTL compatible

ŸFully static operation

The BS616LV2016 has an automatic power down feature, reducing

the power consumption significantly when chip is deselected.

The BS616LV2016 is available in DICE form, JEDEC standard

44-pin TSOP II package.

ŸData retention supply voltage as low as 1.5V

n POWER CONSUMPTION

POWER DISSIPATION

STANDBY

Operating

PRODUCT

FAMILY

OPERATING

TEMPERATURE

PKG TYPE

(I_CC, Max)

(I_{C CSB1}, Typ.)

(I_CCSB1, Max)

V_CC=5.0V

1MHz f_{M ax.}

V_CC=3.0V

V_CC=5.0V V_CC=3.0V V_CC=5.0V V_CC=3.0V

1MHz

f_{M ax.}

Automotive

Grade

BS616LV2016EA

0.6uA

0.1uA

25uA

15uA

8mA

62mA

2mA

30mA TSOP II-44

-40^OC to +125^OC

n PIN CONFIGURATIONS

n BLOCK DIAGRAM

A11

A10

Address

Input

1024

Memory Array

1024 x 2048

Row

Decoder

Buffer

DQ0

DQ1

DQ2

DQ3

VCC

VSS

DQ4

DQ5

DQ6

DQ7

DQ15

DQ14

DQ13

DQ12

VSS

VCC

DQ11

DQ10

DQ9

DQ8

A10

A11

BS616LV2016EC

BS616LV2016EI

2048

DQ0

Data

Input

Column I/O

Buffer

Write Driver

Sense Amp

A16

A15

A14

A13

Data

Output

Buffer

128

A12

Column Decoder

DQ15

Address Input Buffer

Control

A12 A13 A14 A15 A16

V_CC

V_SS

Brilliance Semiconductor, Inc.

reserves the right to change products and specifications without notice.

R0201-BS66LV2016A

Revision 1.2A

Mar.

2006

12 3 4 5 6 7...10

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与BS616LV2016EAP55相关器件

型号	品牌	获取价格	描述	数据表
BS616LV2016EAP70	BSI	获取价格	SRAM
BS616LV2016EC	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2016EC55	BSI	获取价格	Standard SRAM, 128KX16, 55ns, CMOS, PDSO44
BS616LV2016EC-55	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2016EC70	BSI	获取价格	Standard SRAM, 128KX16, 70ns, CMOS, PDSO44
BS616LV2016EC-70	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2016ECG55	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2016ECG70	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2016ECP55	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2016ECP70	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 128K X 16 bit

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