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BS270J05Z PDF预览

BS270J05Z

更新时间: 2024-11-26 04:03:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关晶体管
页数 文件大小 规格书
10页 339K
描述
Small Signal Field-Effect Transistor, 0.4A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN

BS270J05Z 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.67
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):0.4 A最大漏源导通电阻:2 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):5 pF
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BS270J05Z 数据手册

 浏览型号BS270J05Z的Datasheet PDF文件第2页浏览型号BS270J05Z的Datasheet PDF文件第3页浏览型号BS270J05Z的Datasheet PDF文件第4页浏览型号BS270J05Z的Datasheet PDF文件第5页浏览型号BS270J05Z的Datasheet PDF文件第6页浏览型号BS270J05Z的Datasheet PDF文件第7页 
April 1995  
BS270  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
400mA, 60V. RDS(ON) = 2W @ VGS = 10V.  
High density cell design for low RDS(ON)  
These N-Channel enhancement mode field effect transistors  
are produced using Fairchild's proprietary, high cell density,  
DMOS technology. These products have been designed to  
minimize on-state resistance while provide rugged, reliable,  
and fast switching performance. They can be used in most  
applications requiring up to 500mA DC. These products are  
particularly suited for low voltage, low current applications such  
as small servo motor control, power MOSFET gate drivers,  
and other switching applications.  
.
Voltage controlled small signal switch.  
Rugged and reliable.  
High saturation current capability.  
________________________________________________________________________________  
D
G
S
Absolute Maximum Ratings  
TA = 25°C unless otherwise noted  
Symbol Parameter  
BS270  
60  
Units  
V
VDSS  
VDGR  
Drain-Source Voltage  
60  
V
Drain-Gate Voltage (RGS < 1MW)  
VGSS  
Gate-Source Voltage - Continuous  
V
±20  
±40  
- Non Repetitive (tp < 50µs)  
ID  
Drain Current - Continuous  
- Pulsed  
400  
2000  
625  
mA  
PD  
Maximum Power Dissipation  
Derate Above 25°C  
mW  
mW/°C  
°C  
5
TJ,TSTG  
TL  
Operating and Storage Temperature Range  
-55 to 150  
300  
Maximum Lead Temperature for Soldering  
Purposes, 1/16" from Case for 10 Seconds  
°C  
THERMAL CHARACTERISTICS  
Thermal Resistacne, Junction-to-Ambient  
200  
°C/W  
RqJA  
© 1997 Fairchild Semiconductor Corporation  
BS270.SAM  

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