Datasheet > BRF610

BRF610

更新时间： 2024-11-25 03:22:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管微波
页数	文件大小	规格书
4页	33K
描述
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR

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BRF610 数据手册

BIPOLARICS,INC.

Part Number BRF610

NPN LOW NOISE SILICON MICROWAVE TRANSISTOR

PRODUCT DATA SHEET

FEATURES:

• High Gain Bandwidth Product

DESCRIPTION AND APPLICATIONS:

Bipolarics' BRF610is a high performance silicon bipolar

transistor intended for use in low noise application at VHF,

UHF and microwave frequencies. High performance low

noise performance can be realized at 2 mA or less making the

BRF610an excellent choice for battery applications. From 10

mA to greater than 20mA, f_tis nominally 10 GHz. Maximum

recommended continuous current is 20 mA. A broad range of

packagesareofferedincludingSOT-23,SOT-143,plasticand

ceramic0.085"Micro-X, 0.070"Striplineandunencapsulated

dice.

f = 12 GHz typ @ I_C= 10 mA

• Low Noise Figure

1.6 dB typ at 1 GHz

2.0 dB typ at 2 GHz

• High Gain

|S₂₁|²= 18.1 dB @ 1 GHz

12.8 dB @ 2 GHz

Absolute Maximum Ratings:

SYMBOL

PARAMETERS

RATING

UNITS

V_CBO

V_CEO

V_EBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

• Dice, Plastic, Hermetic and Surface

1.5

Mount packages available

I_{C CONT}Collector Current

^oC

Junction Temperature

200

PERFORMANCE DATA:

T_STG

Storage Temperature

-65 to 150

• Electrical Characteristics (T_A= 25^oC)

SYMBOL

PARAMETERS & CONDITIONS

UNIT

MIN.

TYP.

MAX.

V_CE=8V, I_C= 10 mA unless stated

Gain Bandwidth Product

Insertion Power Gain:

GHz

18.1

12.8

f = 1.0 GHz

f = 2.0 GHz

|S₂₁

Power output at 1dB compression:

Gain at 1dB compression:

f = 1.0 GHz

dBm

1dB

Noise Figure: V_CE=8V, I_C= 2mA

f = 1.0 GHz

Z_S= 50Ω

1.6

h_FE

Forward Current Transfer Ratio:

V_CE= 8V, I_C= 10 mA

f = 1MHz

100

250

1.0

I_CBO

I_EBO

Collector Cutoff Current : V_CB=8V

µA

0.2

Emitter Cutoff Current : V_EB=1V

µA

C_CB

Collector Base Capacitance: V_CB= 8V

f = 1MHz

0.11

12 3 4

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