SILICON BRIDGE RECTIFIERS
BR10
BR800 - BR810
PRV : 50 - 1000 Volts
Io : 8.0 Amperes
0.520 (13.20)
0.480 (12.20)
0.158 (4.00)
AC
0.142 (3.60)
FEATURES :
0.77 (19.56)
0.73 (18.54)
* High current capability
* High surge current capability
* High reliability
0.290 (7.36)
0.210 (5.33)
AC
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Pb / RoHS Free
0.052 (1.32)
0.048 (1.22)
0.75 (19.1)
Min.
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
0.30 (7.62)
0.25 (6.35)
Dimensions in inches and ( millimeters )
* Weight : 6.1 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specified.
°
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL BR800 BR801 BR802 BR804 BR806 BR808 BR810 UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
50
35
50
100
70
200
140
200
400
280
400
8.0
600
420
600
800
560
800
1000
700
V
V
V
A
VRRM
VRMS
VDC
Maximum DC Blocking Voltage
100
1000
IF(AV)
Maximum Average Forward Current Tc=50 C
°
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
300
A
IFSM
I2t
VF
A2S
V
160
Maximum Forward Voltage per Diode at IF = 4.0 A
1.0
10
A
m
IR
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Ta = 25
C
°
200
A
m
IR(H)
Ta = 100
C
°
2.5
C/W
°
RqJC
TJ
Operating Junction Temperature Range
Storage Temperature Range
- 40 to + 150
- 40 to + 150
C
C
°
°
TSTG
Notes :
1. Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" THK
(8.2cm.x 8.2cm.x 0.3cm.) Al. Plate. heatsink.
Page 1 of 2
Rev. 02 : March 24, 2005