Datasheet > BR8-10KC5-115V

BR8-10KC5-115V

更新时间： 2024-11-19 03:00:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		光电二极管
页数	文件大小	规格书
2页	138K
描述
Power/Signal Relay, DPDT, Momentary, 0.012A (Coil), 115VDC (Coil), 1380mW (Coil), 2A (Contact), 28VDC (Contact), DC Input, AC/DC Output, Through Hole-Straight Mount,

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BR8-10KC5-115V 数据手册

BR8

Crystal Can

DPDT

Dry Circuit to 2 Amps

SPECIFICATIONS

GENERAL

Contact Resistance:

Before Life...............0.050 Ohms max. @ 2 Amps and

Contact Arrangement .......................... 2PDT (2 Form C)

Weight......................................................... 1.0 oz approx.

Designed to meet the requirements of MIL-PRF-39016.

6 VDC

After Life..................0.100 Ohms max. @ 2 Amps and

6 VDC

ENVIRONMENTAL

PERFORMANCE

Contact Rating (Note 1)

Temperature Range............................... -65^oC to +125^oC

Vibration (Note 2)............................... 0.4" DA 10 - 38 Hz,

20 G's 38 - 2,000 Hz

Resistive ...............2 Amps @ 28 VDC or 115V 400 Hz

(Case Ungrounded)

Shock (Operating) (Note 2) ........................ 50 G's 11 ms

Inductive ........................................... 1 Amp @ 28 VDC

Low Level ............................10-50 µA @ 10-50 mv DC

or peak AC, (Note 4)

ELECTRICAL CHARACTERISTICS

Duty Cycle........................................................Continuous

Insulation Resistance

Life ...................................100,000 operations minimum

@ 2 Amps load, 125^oC

10,000 megohms @ 500V 25^oC

Pull In Power:

1,000 megohms @ 500V 125^oC

BR8.......................................................250 mw approx.

BR8H....................................................150 mw approx.

Dielectric Strength:

Sea Level:

Contact to Case................................... 1,000 VRMS

Contact to Coil ..................................... 1,000 VRMS

Coil to Case ......................................... 1,000 VRMS

Across Open Contacts ........................... 750 VRMS

70,000 Feet

Operate/Release Time:

BR8.................................................................5 ms max

BR8H..............................................................6 ms max

Excluding bounce time at nominal coil voltage

Contact Bounce Time.....................2 ms max @ 2 Amps

6 VDC contact load

All points.................................................. 350 VRMS

Notes:

For case grounded loads and other ratings, consult

the factory.

For other ratings consult the factory.

Relay contacts which have switched high level

currents are no longer suitable for switching low

level loads.

For applications requiring other shock and vibration

levels, consult the factory.

14930 E. Alondra Blvd., La Mirada, CA 90638-5752 (714) 994-6500 FAX (714) 994-3013

W:2000, Rev. 2

中文翻译

下载PDF

与BR8-10KC5-115V相关器件

型号	品牌	获取价格	描述	数据表
BR8-10KC9-115V	MICROSEMI	获取价格	Power/Signal Relay, DPDT, Momentary, 0.012A (Coil), 115VDC (Coil), 1380mW (Coil), 2A (Cont
BR8111	APITECH	获取价格	0 MHz - 400 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, H2, TO-8B
BR8120	APITECH	获取价格	0 MHz - 400 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, H2, TO-8B
BR8-120A1-12V	MICROSEMI	获取价格	Power/Signal Relay, DPDT, Momentary, 0.1A (Coil), 12VDC (Coil), 1200mW (Coil), 2A (Contact
BR8-120A14-12V	MICROSEMI	获取价格	Power/Signal Relay, DPDT, Momentary, 0.1A (Coil), 12VDC (Coil), 1200mW (Coil), 2A (Contact
BR8-120A5-12V	MICROSEMI	获取价格	Power/Signal Relay, DPDT, Momentary, 0.1A (Coil), 12VDC (Coil), 1200mW (Coil), 2A (Contact
BR8-120A9-12V	MICROSEMI	获取价格	Power/Signal Relay, DPDT, Momentary, 0.1A (Coil), 12VDC (Coil), 1200mW (Coil), 2A (Contact
BR8-120B1-12V	MICROSEMI	获取价格	Power/Signal Relay, DPDT, Momentary, 0.1A (Coil), 12VDC (Coil), 1200mW (Coil), 2A (Contact
BR8-120B14-12V	MICROSEMI	获取价格	Power/Signal Relay, DPDT, Momentary, 0.1A (Coil), 12VDC (Coil), 1200mW (Coil), 2A (Contact
BR8-120B5-12V	MICROSEMI	获取价格	Power/Signal Relay, DPDT, Momentary, 0.1A (Coil), 12VDC (Coil), 1200mW (Coil), 2A (Contact

与BR8-10KC5-115V相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

37

产品中心

服务支持

精选活动

关于我们

帮助中心

BR8-10KC5-115V

BR8-10KC5-115V 数据手册

与BR8-10KC5-115V相关器件

与BR8-10KC5-115V相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BR8-10KC5-115V

BR8-10KC5-115V 数据手册

与BR8-10KC5-115V相关器件

与BR8-10KC5-115V相关文章

您还可以找

您在本页遇到什么问题？