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BR2502 PDF预览

BR2502

更新时间: 2024-11-24 22:39:39
品牌 Logo 应用领域
EIC /
页数 文件大小 规格书
2页 23K
描述
SILICON BRIDGE RECTIFIERS

BR2502 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:compliant
风险等级:5.65配置:BRIDGE, 4 ELEMENTS
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1.1 V
最大非重复峰值正向电流:300 A元件数量:4
最大输出电流:25 A最大重复峰值反向电压:200 V
子类别:Bridge Rectifier Diodes表面贴装:NO
Base Number Matches:1

BR2502 数据手册

 浏览型号BR2502的Datasheet PDF文件第2页 
SILICON BRIDGE RECTIFIERS  
BR2500 - BR2510  
PRV : 50 - 1000 Volts  
Io : 25 Amperes  
BR50  
0.728(18.50)  
0.688(17.40)  
FEATURES :  
* High current capability  
* High surge current capability  
* High reliability  
1.130(28.70)  
1.120(28.40)  
0.570(14.50)  
0.530(13.40)  
0.685(16.70)  
0.618(15.70)  
* Low reverse current  
* Low forward voltage drop  
* Ideal for printed circuit board  
0.210(5.30)  
0.200(5.10)  
0.658(16.70)  
0.618(15.70)  
0.032(0.81)  
0.028(0.71)  
0.252(6.40)  
0.248(6.30)  
f
MECHANICAL DATA :  
* Case : Molded plastic with heatsink integrally  
mounted in the bridge encapsulation  
* Epoxy : UL94V-O rate flame retardant  
* Terminals : plated .25" (6.35 mm). Faston  
* Polarity : Polarity symbols marked on case  
* Mounting position : Bolt down on heat-sink with  
silicone thermal compound between bridge  
and mounting surface for maximum heat  
transfer efficiency.  
0.100(2.50)  
0.090(2.30)  
0.905(23.0)  
0.826(21.0)  
0.310(7.87)  
0.280(7.11)  
Metal Heatsink  
Dimensions in inches and ( millimeters )  
* Weight : 17.1 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
°
Rating at 25 C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RATING  
SYMBOL BR2500 BR2501 BR2502 BR2504 BR2506 BR2508 BR2510 UNITS  
RRM  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
25  
600  
420  
600  
800  
560  
800  
1000  
700  
Volts  
Volts  
VRMS  
DC  
Maximum DC Blocking Voltage  
100  
1000  
Volts  
V
°
IF(AV)  
Amps.  
Maximum Average Forward Current Tc = 55 C  
Peak Forward Surge Current Single half sine wave  
Superimposed on rated load (JEDEC Method)  
Current Squared Time at t < 8.3 ms.  
Maximum Forward Voltage per Diode at IF = 12.5 Amp.  
°
FSM  
I
300  
375  
Amps.  
A2S  
2t  
I
VF  
IR  
1.1  
Volts  
m
A
10  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
Typical Thermal Resistance (Note 1)  
Ta = 25 C  
°
IR(H)  
m
A
200  
Ta = 100 C  
q
1.45  
°
C/W  
R JC  
J
Operating Junction Temperature Range  
Storage Temperature Range  
T
- 40 to + 150  
- 40 to + 150  
°
C
TSTG  
°
C
Notes :  
1. Thermal Resistance from junction to case with units mounted on a 5" x 6" x 4.9" (12.8cm.x 15.2cm.x 12.4cm.) Al.-Finned Plate  
UPDATE : APRIL 23, 1998  

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