Datasheet > BR24T512FVT-3AM

BR24T512FVT-3AM

更新时间： 2024-12-02 00:58:47

品牌	Logo	应用领域
罗姆 - ROHM		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
33页	1199K
描述
I2C BUS EEPROM (2-Wire)

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数据手册

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BR24T512FVT-3AM 数据手册

Datasheet

Serial EEPROM Series Standard EEPROM

I²C BUS EEPROM (2-Wire)

BR24T512-3AM

General Description

BR24T512-3AM is a serial EEPROM of I²C BUS Interface Method

Features

Packages W(Typ) x D(Typ)x H(Max)

 All controls available by 2 ports of serial clock (SCL)

and serial data (SDA)

 Other devices than EEPROM can be connected to the

same port, saving microcontroller port

 1.7V to 5.5V single power source operation most

suitable for battery use

 1.7V to 5.5V wide limit of operating voltage, possible

1MHz operation

SOP-J8

4.90mm x 6.00mm x 1.65mm

TSSOP-B8

3.00mm x 6.40mm x 1.20mm

 Page Write Mode useful for initial value write at factory

shipment

 Self-timed Programming Cycle

 Low Current Consumption

 Prevention of Write Mistake

SOP8

5.00mm x 6.20mm x 1.71mm



WP (Write Protect) Function added

Prevention of Write Mistake at Low Voltage

 More than 1 million write cycles

 More than 40 years data retention

 Noise filter built in SCL / SDA terminal

 Initial delivery state FFh

Figure.1

 AEC-Q100 Grade3 Qualified

Page Write

Page Size

128 Bytes

Product number

BR24T512-3AM

Bit

Format

Power Supply

Capacity

Type

Package

TSSOP-B8

SOP-J8

Voltage

BR24T512FVT-3AM

BR24T512FJ-3AM

BR24T512F-3AM

512Kbit

64Kx8

1.7V to 5.5V

SOP8

○

Product structure：Silicon monolithic integrated circuit ○This product has no designed protection against radioactive rays

.www.rohm.com

TSZ22111・14・001

TSZ02201-0GFG0G100420-1-2

15.Jul.2016 Rev.001

1/29

12 3 4 5 6 7...33

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