BQ77216
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SLUSE36B – DECEMBER 2020 – REVISED JULY 2021
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
TJ
Junction temperature
–65
150
°C
(1) VDD is equal to top of stack voltage
8.4 Thermal Information
DEVICE
THERMAL METRIC(1)
PW (TSSOP)
24 PINS
97.8
UNIT
RθJA
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
40.5
53.1
ΨJT
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
4.3
ΨJB
52.7
RθJC(bot)
NA
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
8.5 DC Characteristics
Typical values stated where TA = 25°C and VDD = 58 V, MIN/MAX values stated where TA = –40°C to 85°C and VDD = 5 V
to 75 V (unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OVER VOLTAGE PROTECTION (OV)
VOV
OV Detection Range
3.55
5.1
V
VOV_STEP OV Detection Steps
25
mV
Selected OV Hysterysis depends on part
number. See device selection table for
details.
VOV
100
–
mV
mV
VOV_HYS OV Detection Hysteresis
Selected OV Hysterysis depends on part
number. See device selection table for
details.
VOV
200
–
TA = 25℃
OV Detection Accuracy
–10
–20
–50
10
20
50
mV
mV
mV
0℃ ≤ TA ≤ 60℃
-40℃ ≤ TA ≤ 110℃
VOV_ACC OV Detection Accuracy
OV Detection Accuracy
UNDER VOLTAGE PROTECTION (UV)
VUV
UV Detection Range
1.0
3.5
V
VUV_STEP UV Detection Steps
50
mV
Selected OV Hysterysis depends on part
number. See device selection table for
details.
VUV
100
+
mV
mV
VUV_HYS UV Detection Hysteresis
Selected OV Hysterysis depends on part
number. See device selection table for
details.
VUV
200
+
UV Detection Accuracy
VUV_ACC
TA = 25℃
–30
–50
450
30
50
mV
mV
mV
UV Detection Accuracy
-40 ≤ TA ≤ 110℃
VUV_MIN UV Detection Disabled Threshold
Vn - Vn-1 where n = 2 to 16 and V1 - VSS
500
550
OVER TEMPERATURE PROTECTION (OT)
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