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BLS012N04TH-5DL8 PDF预览

BLS012N04TH-5DL8

更新时间: 2024-06-27 12:13:37
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
6页 611K
描述
40V, N Channel MOSFETs

BLS012N04TH-5DL8 数据手册

 浏览型号BLS012N04TH-5DL8的Datasheet PDF文件第2页浏览型号BLS012N04TH-5DL8的Datasheet PDF文件第3页浏览型号BLS012N04TH-5DL8的Datasheet PDF文件第4页浏览型号BLS012N04TH-5DL8的Datasheet PDF文件第5页浏览型号BLS012N04TH-5DL8的Datasheet PDF文件第6页 
N-Channel Enhancement Mode MOSFET  
BLS012N04TH-5DL8  
Features  
Advanced shielded-gate technology  
Ultra low RDS(ON) to minimize conduction losses  
Superior thermal resistance  
HBM: JESD22-A114-B: 1C  
Mechanical Data  
Case: PDFN5×6-8L  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,  
Method 208  
PDFN5×6-8L  
Ordering Information  
Part Number  
Package  
Shipping Quantity  
Marking Code  
BLS012N04TH-5DL8  
PDFN5×6-8L  
5000 pcs / Tape & Reel  
012N04TH  
Maximum Ratings (@ TC = 25°C unless otherwise specified)  
Parameter  
Drain-to-Source Voltage  
Symbol  
Value  
Unit  
VDSS  
VGSS  
40  
±20  
V
V
Gate-to-Source Voltage  
Continuous Drain Current (TC = 25°C, Silicon limited) *1  
Continuous Drain Current (TC = 100°C, Silicon limited) *1  
Continuous Drain Current (TA = 25°C ) *2  
Continuous Drain Current (TA = 100°C ) *2  
Pulsed Drain Current (tp = 10μs, TC = 25°C ) *1  
Single Pulse Avalanche Energy *3  
270  
A
190  
A
ID  
43  
A
30  
A
IDM  
1080  
500  
A
EAS  
mJ  
W
W
°C  
°C  
Power Dissipation (TC = 25°C)  
150  
PD  
Power Dissipation (TA = 25°C) *2  
3.8  
Operating Junction Temperature Range  
Storage Temperature Range  
TJ  
-55 ~ +175  
-55 ~ +175  
TSTG  
Thermal Characteristics  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Thermal Resistance Junction-to-Case  
Thermal Resistance Junction-to-Air *2  
RθJC  
RθJA  
-
-
0.8  
34  
1
°C /W  
°C /W  
40  
MTM1599A: November 2023 [2.0]  
www.gmesemi.com  
1

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