Datasheet > BLM16N10

BLM16N10

更新时间： 2023-12-06 20:06:18

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
8页	1307K
描述
The BLM16N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

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BLM16N10 数据手册

Green Product

BLM16N10

100V N-Channel Power MOSFET

DESCRIPTION

KEY CHARACTERISTICS

The BLM16N10 uses advanced trench technology to provide ● V_DS= 100V,I_D= 60A

excellent R_DS(ON), low gate charge. It can be used in a wide

variety of applications.

R_DS(ON)< 16.5mΩ @ V_GS=10V

● Special process technology for high ESD capability

● High density cell design for lower Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

100% UIS TESTED！

Application

●Power switching application

●Hard switched and High frequency circuits

●Uninterruptible power supply

100% DVDS TESTED！

TO-220 Top View

TO-252-2L Top View

Schematic diagram

Package Marking And Ordering Information

Device Marking

Ordering Codes

BLM16N10-P

BLM16N10-D

Package

TO-220

Product Code

Packing

M16N10

BLM16N10

Tube

M16N10

TO-252-2L

Tape Reel

Absolute Maximum Ratings (T_A=25℃

Parameter

unless otherwise noted)

Symbol

VDS

Limit

100

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

VGS

Drain Current-Continuous

I_D

Drain Current-Pulsed ^{(Note 1)}

240

I_DM

160

℃

Maximum Power Dissipation(Tc=25℃)

Single pulse avalanche energy^{(Note 2)}

Operating Junction and Storage Temperature Range

P_D

250

E_AS

-55 To 175

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case

R_θJC

0.93

℃/W

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