Datasheet > BLM04N08

BLM04N08

更新时间： 2023-12-06 20:10:10

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
8页	829K
描述
The BLM04N08 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

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BLM04N08 数据手册

Green Product

BLM04N08

Electrical Characteristics (TA=25℃ unless otherwise noted)

Parameter

Symbol

Condition

Min Typ Max Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

On Characteristics

BV_DSS

I_DSS

V_GS=0V I_D=250μA

V_DS=80V,V_GS=0V

V_GS=±20V,V_DS=0V

μA

I_GSS

±100

Gate Threshold Voltage

Drain-Source On-State Resistance^{(Note 3)}

Forward Transconductance

Dynamic Characteristics

Input Capacitance

V_GS(th)

R_DS(ON)

g_FS

V_DS=V_GS,I_D=250μA

V_GS=10V, I_D=50A

V_DS=5V,I_D=15A

mΩ

C_lss

C_oss

C_rss

13200

-950

810

V_DS=25V,V_GS=0V,

f=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics ^{(Note 4)}

Turn-on Delay Time

t_d(on)

t_r

t_d(off)

t_f

Turn-on Rise Time

V_DD=40V, ID=40A,

V_GS=10V,R_GEN=3Ω

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_g

Q_gs

Q_gd

257

V_DS=64V,I_D=80A

V_GS=10V

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics

Diode Forward Voltage

V_SD

V_GS=0V,I_S=80A

1.2

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. E_AScondition :T _j=25℃,V_DD=50V,V_G=10V,L=0.5mH,Rg=1Ω

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production.

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