Datasheet > BLM024N03

BLM024N03

更新时间： 2024-11-19 17:00:55

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
8页	946K
描述
BLM024N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

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BLM024N03 数据手册

BLM024N03

Power MOSFET

1．Description

BLM024N03 uses advanced trench technology

and design to provide excellent R_DS(ON)with low

gate charge. It can be used in a wide variety of

applications.

KEY CHARACTERISTICS

Parameter

V_DS

I_D

R_DS(ON)@10V_.Typ

R_DS(ON)@4.5V_.Typ

FEATURES

Value Unit

130

2.2

3.3

mΩ



High power and current handing capability

Lead free product is acquired

100% avalanche tested

100% ΔVds tested

RoHS product

Surface mount package

TO-252 Top View

APPLICATIONS



PWM applications

Load switch

Power management

ORDERING INFORMATION

Device Marking Ordering Codes

Package Product Code

TO-252 BLM024N03

Packing

Reel

M024N03

BLM024N03-D

XXXX：Device Marking

(2) Package type

(1) Chip name

XXXX

YYWW ZZ

SSSSS

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

(1)BLM024N03:30V 2.7mΩ

(2)D:TO-252

BLM024N03

www.belling.com.cn

Rev 1

Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited

1/ 8

11/2023

12 3 4 5 6 7 8

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