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BLF9G20LS-160VU PDF预览

BLF9G20LS-160VU

更新时间: 2024-11-18 22:07:43
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
12页 876K
描述
RF FET LDMOS 65V 19.8DB SOT1120B

BLF9G20LS-160VU 数据手册

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BLF9G20LS-160V  
Power LDMOS transistor  
Rev. 3 — 1 September 2015  
Product data sheet  
1. Product profile  
1.1 General description  
160 W LDMOS power transistor with improved video bandwidth for base station  
applications at frequencies from 1800 MHz to 2000 MHz.  
Table 1.  
Typical performance  
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.  
Test signal  
f
IDq  
VDS  
(V)  
28  
PL(AV)  
(W)  
Gp  
D  
ACPR  
(MHz)  
(mA)  
800  
(dB)  
19.8  
(%) (dBc)  
33.5 28 [1]  
2-carrier W-CDMA  
1805 to 1880  
35.5  
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;  
carrier spacing = 5 MHz.  
1.2 Features and benefits  
Excellent ruggedness  
High efficiency  
Low thermal resistance providing excellent thermal stability  
Excellent broadband performance  
Lower output capacitance for improved performance in Doherty applications  
Designed for low memory effects providing excellent pre-distortability  
Internally matched for ease of use  
Integrated ESD protection  
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances  
(RoHS)  
1.3 Applications  
RF power amplifier for multi systems base stations and multi carrier applications in the  
1800 MHz to 2000 MHz frequency range  

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