Datasheet > BLF7G10L-250,118

BLF7G10L-250,118

更新时间： 2024-11-23 14:48:07

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
13页	711K
描述
BLF7G10L-250

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技术参数
数据手册

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BLF7G10L-250,118 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	SOT
针数：	2	Reach Compliance Code：	compliant
风险等级：	5.7	Base Number Matches：	1

BLF7G10L-250,118 数据手册

BLF7G10L-250;

BLF7G10LS-250

Power LDMOS transistor

Rev. 4 — 13 September 2012

Product data sheet

1. Product profile

1.1 General description

250 W LDMOS power transistor for base station applications at frequencies from

869 MHz to 960 MHz.

Table 1.

Typical performance

Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;

carrier spacing = 5 MHz. Typical RF performance at T_case= 25 C.

Test signal

I_Dq

V_DS

(V)

P_L(AV)

(W)

G_p

_D

ACPR

(MHz)

(mA)

1800

(dB)

19.5

(%) (dBc)

27.4 35.6

30.5 34

2-carrier W-CDMA

869 to 894 ^[1]

920 to 960 ^[2]

[1] In a common source class-AB application test circuit.

[2] In a common source class-AB production test circuit.

1.2 Features and benefits

 Excellent ruggedness

 High efficiency

 Low R_thproviding excellent thermal stability

 Designed for broadband operation (869 MHz to 960 MHz)

 Lower output capacitance for improved performance in Doherty applications

 Designed for low memory effects providing excellent pre-distortability

 Internally matched for ease of use (input and output)

 Integrated ESD protection

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 RF power amplifiers for W-CDMA base stations and multi carrier applications in the

869 MHz to 960 MHz frequency range

12 3 4 5 6 7...13

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