Datasheet > BL8N80KF

BL8N80KF

更新时间： 2024-04-09 19:03:26

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	575K
描述
8A, 800V, 36W, N Channel,Power MOSFETs

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BL8N80KF 数据手册

N-Channel Enhancement Mode MOSFET

BL8N80K BL8N80KF

Electrical Characteristics (@ T_C= 25°C unless otherwise specified)

Symbol

Parameter

Test Condition

Min. Typ. Max. Unit

Static Characteristics

V_DSS

I_DSS

I_GSS

Drain-Source Breakdown Voltage

V_GS= 0V, I_D= 250μA

800

V_DS= 800V, V_GS= 0V, T_A= 25°C

V_DS= 640V, V_GS= 0V, T_A= 125°C

V_GS= ±20V, V_DS= 0V

μA

Zero Gate Voltage Drain Current

250

±1 0

Gate-Body Leakage Current

On Characteristics

R_DS(ON)

Drain-Source On-resistance^*2

V_GS(th)Gate Threshold Voltage

Dynamic Characteristics

V_GS= 10V, I_D= 4A

1.25

V_DS= V_GS, I_D= 250μA

C_ISS

C_OSS

C_RSS

Input Capacitance

2150

164

V_GS= 0V

Output Capacitance

V_DS= 25V

f = 1.0MHz

Reverse Transfer Capacitance

Switching Characteristics

t_d(ON)

t_r

t_d(OFF)

t_f

Turn-on Delay Time^*4

Turn-on Rise Time^*4

Turn-Off Delay Time^*4

Turn-Off Fall Time^*4

V_DD= 400V

V_GS= 10V

R_G= 25Ω

I_D= 8A

140

Q_G

Total Gate-Charge

V_DD=400V

V_GS= 10V

I_D= 8A

Q_GS

Q_GD

Gate to Source Charge

Gate to Drain (Miller) Charge

8.5

Source-Drain Diode Characteristics

V_SD

trr

Diode Forward Voltage^*2

Reverse Recovery Time

Reverse Recovery Charge

I_SD= 8A, V_GS= 0V

1.5

300

2.2

μC

I_F= 8A, V_GS= 0V

d_IF/d_t= 100A/us

Qrr

Notes:

1. The data tested by surface mounted on a 1 inch²FR-4 board with 2OZ copper

2. The data tested by pulsed, pulse width ≤ 300μs, duty cycle ≤ 2%

3. The E_ASdata shows Max. rating. The test condition is V_DD= 50V, V_GS= 15V, L = 10mH

4. Guaranteed by design, not subject to production

MTM1003A: July 2023 [1.1]

www.gmesemi.com

123 4 5

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