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BL8N80KF PDF预览

BL8N80KF

更新时间: 2024-04-09 19:03:26
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
5页 575K
描述
8A, 800V, 36W, N Channel,Power MOSFETs

BL8N80KF 数据手册

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N-Channel Enhancement Mode MOSFET  
BL8N80K BL8N80KF  
Electrical Characteristics (@ TC = 25°C unless otherwise specified)  
Symbol  
Parameter  
Test Condition  
Min. Typ. Max. Unit  
Static Characteristics  
VDSS  
IDSS  
IGSS  
Drain-Source Breakdown Voltage  
VGS = 0V, ID = 250μA  
800  
-
-
-
-
-
V
VDS = 800V, VGS = 0V, TA = 25°C  
VDS = 640V, VGS = 0V, TA = 125°C  
VGS = ±20V, VDS = 0V  
-
-
-
25  
μA  
μA  
μA  
Zero Gate Voltage Drain Current  
250  
±1 0  
Gate-Body Leakage Current  
On Characteristics  
RDS(ON)  
Drain-Source On-resistance*2  
VGS(th) Gate Threshold Voltage  
Dynamic Characteristics  
VGS = 10V, ID = 4A  
-
-
-
1.25  
4
Ω
VDS = VGS, ID = 250μA  
2
V
CISS  
COSS  
CRSS  
Input Capacitance  
-
-
-
2150  
164  
14  
-
-
-
VGS = 0V  
Output Capacitance  
VDS = 25V  
f = 1.0MHz  
pF  
Reverse Transfer Capacitance  
Switching Characteristics  
td(ON)  
tr  
td(OFF)  
tf  
Turn-on Delay Time*4  
Turn-on Rise Time*4  
Turn-Off Delay Time*4  
Turn-Off Fall Time*4  
-
-
-
-
-
-
-
26  
40  
-
-
-
-
-
-
-
VDD = 400V  
VGS = 10V  
RG = 25Ω  
ID = 8A  
ns  
140  
68  
QG  
Total Gate-Charge  
49  
VDD =400V  
VGS = 10V  
ID = 8A  
QGS  
QGD  
Gate to Source Charge  
Gate to Drain (Miller) Charge  
8.5  
19  
nC  
Source-Drain Diode Characteristics  
VSD  
trr  
Diode Forward Voltage*2  
Reverse Recovery Time  
Reverse Recovery Charge  
ISD = 8A, VGS = 0V  
-
-
-
-
1.5  
V
300  
2.2  
-
-
ns  
μC  
IF = 8A, VGS = 0V  
dIF/dt = 100A/us  
Qrr  
Notes:  
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper  
2. The data tested by pulsed, pulse width ≤ 300μs, duty cycle ≤ 2%  
3. The EAS data shows Max. rating. The test condition is VDD = 50V, VGS = 15V, L = 10mH  
4. Guaranteed by design, not subject to production  
MTM1003A: July 2023 [1.1]  
www.gmesemi.com  
2

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