品牌 | Logo | 应用领域 |
上海贝岭 - BELLING | / | |
页数 | 文件大小 | 规格书 |
15页 | 1139K | |
描述 | ||
BL6N40, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BL6N40D | BL Galaxy Electrical |
获取价格 |
6A, 400V, 62.5W, N Channel,Power MOSFETs | |
BL6N65F | BL Galaxy Electrical |
获取价格 |
6.2A, 650V, 40W, N Channel, Power MOSFETs | |
BL6N70 | BL Galaxy Electrical |
获取价格 |
700V, N Channel, HV Planar MOSFETs | |
BL6N70A | BELLING |
获取价格 |
BL6N70A, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology | |
BL6N70B | BL Galaxy Electrical |
获取价格 |
700V, N Channel, HV Planar MOSFETs | |
BL6N70F | BL Galaxy Electrical |
获取价格 |
700V, N Channel, HV Planar MOSFETs | |
BL6P10-3DL8 | BL Galaxy Electrical |
获取价格 |
-100V, P Channel MOSFETs | |
BL7004S2-6L | BL Galaxy Electrical |
获取价格 |
70V,Surface Mount TVS | |
BL7120AH | BELLING |
获取价格 |
高耐压,面向工业控制、电表等应用的高可靠性数字隔离器。 | |
BL7120AL | BELLING |
获取价格 |
高耐压,面向工业控制、电表等应用的高可靠性数字隔离器。 |