Datasheet > BL3N20R

BL3N20R

更新时间： 2024-04-09 19:00:44

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	735K
描述
3A, 200V, 3.1W, N Channel, Power MOSFETs

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中文翻译

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数据手册

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BL3N20R 数据手册

N-Channel Enhancement Mode MOSFET

BL3N20R

Features



High avalanche energy pulse withstand capability

Low gate drive voltage (Logic level capable)

Low input capacitance

Low on-resistance

Fast switching speed

Mechanical Data



Case: SOT-223

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

SOT-223

Ordering Information

Part Number

Package

SOT-223

Shipping Quantity

Marking Code

BL3N20R

4000 pcs / Tape & Reel

3N20

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

I_D

200

±20

Gate-to-Source Voltage

Continuous Drain Current

Pulsed Drain Current ^*2

I_DM

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C)

P_D

R_θJA

T_J

3.1

°C/W

°C

Thermal Resistance Junction-to-Air ^*1

Operating Junction Temperature Range

Storage Temperature Range

40.3

-55 ~ +150

T_STG

°C

MTM0465A: May 2021

www.gmesemi.com

12 3 4 5

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