品牌 | Logo | 应用领域 |
银河微电 - BL Galaxy Electrical | / | |
页数 | 文件大小 | 规格书 |
6页 | 770K | |
描述 | ||
3A, 800V, 75W, N Channel, Power MOSFETs |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
BL3N80I | Galaxy Microelectronics | 3A, 800V, 75W, N Channel, Power MOSFETs |
获取价格 |
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BL3N90 | BELLING | BL3N90, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology |
获取价格 |
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BL3N90D | Galaxy Microelectronics | 3A, 900V, 62.5W, N Channel,Power MOSFETs |
获取价格 |
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BL3N90E | BELLING | "BL3N90E, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technolog |
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BL3N90F | Galaxy Microelectronics | 3A, 900V, 30W, N Channel, Power MOSFETs |
获取价格 |
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BL3N90I | Galaxy Microelectronics | 3A, 900V, 62.5W, N Channel,Power MOSFETs |
获取价格 |