Datasheet > BL3N90I

BL3N90I

更新时间： 2024-04-09 18:58:35

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	667K
描述
3A, 900V, 62.5W, N Channel,Power MOSFETs

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中文翻译

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数据手册

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BL3N90I 数据手册

N-Channel Enhancement Mode MOSFET

BL3N90I BL3N90D

Features



Ultra Low gate charge

Low reverse transfer capacitance

Fast switching capability

Avalanche energy specified

Improved dv/dt capability, high ruggedness

Mechanical Data



Case: TO-251, TO-252

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

BL3N90I

TO-251

BL3N90D

TO-252

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

BL3N90I

TO-251

TO-252

80 pcs / Tube

3N90I

BL3N90D

80 pcs / Tube or 2500 pcs / Tape & Reel

3N90D

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

V_DSS

V_GSS

I_D

Value

900

±30

Unit

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C )

Pulsed Drain Current

I_DM

Single Pulse Avalanche Energy ^*1

E_AS

Thermal Characteristics

Parameter

Power Dissipation (T_C= 25°C )

Symbol

P_D

Value

62.5

Unit

Thermal Resistance Junction-to-Air

Thermal Resistance Junction-to-Case

Operating Junction Temperature Range

Storage Temperature Range

R_θJA

R_θJC

T_J

°C /W

°C

-55 ~ +150

T_STG

°C

MTM0410A: December 2022 [1.1]

www.gmesemi.com

12 3 4 5 6

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