Datasheet > BL3N80D

BL3N80D

更新时间： 2024-04-09 18:58:39

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	770K
描述
3A, 800V, 75W, N Channel, Power MOSFETs

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BL3N80D 数据手册

N-Channel Enhancement Mode MOSFET

BL3N80I BL3N80D

Electrical Characteristics (@ T_J= 25°C unless otherwise specified)

Symbol

Parameter

Test Condition

Min. Typ. Max. Unit

Static Characteristics

V_DSS

I_DSS

I_GSS

Drain-Source Breakdown Voltage

V_GS= 0V, I_D= 250μA

800

V_DS= 800V, V_GS= 0V, T_J= 25°C

V_DS= 640V, V_GS= 0V, T_J= 125°C

V_GS= ±30V, V_DS= 0V

μA

Zero Gate Voltage Drain Current

100

±1 00

Gate-Body Leakage Current

On Characteristics ^*2

R_DS(ON)

V_GS(th)

gfs

Static Drain-Source On-resistance

V_GS= 10V, I_D= 1.5A

V_DS= V_GS, I_D= 250μA

V_DS= 15V, I_D= 3A

4.8

Gate Threshold Voltage

Forward Transconductance

5.5

Dynamic Characteristics

C_ISS

C_OSS

C_RSS

Input Capacitance

490

V_GS= 0V

Output Capacitance

V_DS= 25V

f = 1.0MHz

Reverse Transfer Capacitance

Switching Characteristics

t_d(ON)

t_r

t_d(OFF)

t_f

Turn-on Delay Time

Turn-on Rise Time

V_DD= 400V

V_GS= 10V

R_G= 12Ω

I_D= 3A

Turn-Off Delay Time

Turn-Off Fall Time

Q_G

Total Gate-Charge

V_DD=400V

V_GS= 10V

I_D= 3A

Q_GS

Q_GD

Gate to Source Charge

Gate to Drain (Miller) Charge

Source-Drain Diode Characteristics

V_SD

I_S

Diode Forward Voltage ^*2

Continuous Source Current

Pulsed Source Current

I_SD= 3A, V_GS= 0V

1.5

I_SM

trr

Reverse Recovery Time

Reverse Recovery Charge

135

446

I_F= 3A, V_GS= 0V

d_IF/d_t= 100A/us

Qrr

Notes:

1. Repetitive rating; pulse width limited by maximum junction temperature

2. The data tested by pulsed, pulse width ≤ 380μs, duty cycle ≤ 2%

3. L = 10mH, I_D= 5.5A, Start T_J= 25°C

MTM0110A: May 2019

www.gmesemi.com

123 4 5 6

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