Datasheet > BL-L3522PD

BL-L3522PD

更新时间： 2024-02-25 20:17:45

品牌	Logo	应用领域
BETLUX		光电二极管光电二极管
页数	文件大小	规格书
3页	72K
描述
SILICON PHOTO DIODES

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中文翻译

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数据手册

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BL-L3522PD 数据手册

SILICON PHOTO DIODES

BL-L3522PD

ꢀ

ꢁ

Features:

5.1*3.0*7.4mm SILICON PHOTO DIODES

Choice of various viewing angles.

Diffused and Water clear lens are available.

ꢁ Fast response time.

ꢁ High photo sensitivity.

ꢁ Small junction capacitance.

ꢁ The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitter.

Applications:

ꢁ High speed photo detector

ꢁ Camera

ꢁ Infrared remote controller for TVs VCR, audio equipment, air conditioner, etc.

Absolute Maximum Ratings at Ta=25

Parameter

Symbol

Rating

Unit

Power Dissipation

Reverse Voltage

P_d

V_R

150

Operation Temperature

T_OPR

-40 to +80

℃

Storage Temperature

T_STG

-40 to +85

℃

Max.260

for 3 sec Max.

Lead Soldering Temperature

TSOL

(1.6mm from the base of the epoxy bulb)

Electronic Optical Characteristics at Ta=25

Items

Symbol

Min.

Typ.

Max.

Unit

Condition

Wavelength of Peak

Sensitivity

Open Circuit Voltage

Short Circuit Current

940

λ_P

V_OC

I_SC

0.35

H=5mW/cm²

λ_P=940nm

H=5mW/cm²

λ_P=940nm

V_R=5V

Reverse Light Current

I_L

120

H=0mW/cm2

V_R=10V

Reverse Dark Current

Reverse Break down

Voltage

Viewing angle

H=0mW/cm2

I_R=100uA

V_BR

2θ1/2

Tr/T_f

170

Deg

R_L=1000Ω

V_R=10V

Rise/Fall Time

50/50

APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS

REV NO: V.2

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