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BGY67,112 PDF预览

BGY67,112

更新时间: 2024-11-21 14:48:03
品牌 Logo 应用领域
恩智浦 - NXP 高功率电源射频微波
页数 文件大小 规格书
8页 101K
描述
BGY67 - 200 MHz, 22 dB gain reverse amplifier SFM 7-Pin

BGY67,112 技术参数

生命周期:Obsolete零件包装代码:SFM
包装说明:SOT-115J针数:7
Reach Compliance Code:unknownHTS代码:8542.33.00.01
风险等级:5.15其他特性:LOW NOISE
特性阻抗:75 Ω构造:MODULE
增益:21.5 dB最大工作频率:200 MHz
最小工作频率:5 MHz最高工作温度:90 °C
最低工作温度:-20 °C封装主体材料:PLASTIC/EPOXY
封装等效代码:SOT-115J电源:24 V
射频/微波设备类型:WIDE BAND HIGH POWER子类别:RF/Microwave Amplifiers
最大压摆率:230 mA技术:HYBRID
Base Number Matches:1

BGY67,112 数据手册

 浏览型号BGY67,112的Datasheet PDF文件第2页浏览型号BGY67,112的Datasheet PDF文件第3页浏览型号BGY67,112的Datasheet PDF文件第4页浏览型号BGY67,112的Datasheet PDF文件第5页浏览型号BGY67,112的Datasheet PDF文件第6页浏览型号BGY67,112的Datasheet PDF文件第7页 
BGY67  
200 MHz, 22 dB gain reverse amplifier  
Rev. 5 — 19 September 2011  
Product data sheet  
1. Product profile  
1.1 General description  
Hybrid amplifier module for CATV systems operating over a frequency range of 5 MHz  
to 200 MHz at a voltage supply of 24 V (DC). The device is intended as a reverse  
amplifier for use in two-way systems.  
CAUTION  
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken  
during transport and handling.  
1.2 Features and benefits  
Excellent linearity  
Extremely low noise  
Silicon nitride passivation  
Rugged construction  
TiPtAu metallized crystals ensure optimal reliability  
1.3 Quick reference data  
Table 1.  
Quick reference data  
Symbol Parameter  
Conditions  
Min  
21.5  
-
Typ  
-
Max  
22.5  
230  
Unit  
dB  
Gp  
Itot  
power gain  
f = 10 MHz  
[1]  
total current consumption (DC) VB = 24 V  
215  
mA  
[1] The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.  
 
 
 
 
 

BGY67,112 替代型号

型号 品牌 替代类型 描述 数据表
BGR269,112 NXP

类似代替

BGR269 - 200 MHz, 35 dB gain reverse amplifier SFM 7-Pin

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