Datasheet > BGU7044

BGU7044

更新时间： 2022-10-17 03:41:25

品牌	Logo	应用领域
恩智浦 - NXP		放大器
页数	文件大小	规格书
10页	151K
描述
1 GHz wideband low-noise amplifier

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BGU7044 数据手册

BGU7044

NXP Semiconductors

1 GHz wideband low-noise amplifier

5. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min Max Unit

V_CC

I_CC(tot)

P_tot

supply voltage

RF input AC coupled

configurable with external resistor

T_sp 100 C

0.6 3.5

total supply current

total power dissipation

input power

dBm

[1]

250

P_i

single tone

T_stg

T_j

storage temperature

junction temperature

ambient temperature

65 +150 C

150

C

T_amb

V_ESD

40 +85

electrostatic discharge

voltage

Human Body Model (HBM);

according to JEDEC standard

22-A114E

Charged Device Model (CDM);

according to JEDEC standard

22-C101B

1.5

[1] T_spis the temperature at the solder point of the ground lead.

6. Thermal characteristics

Table 6.

Thermal characteristics

Symbol Parameter

Conditions

Typ

Unit

R_th(j-sp)

thermal resistance from junction to solder point

240

K/W

7. Characteristics

Table 7.

Characteristics

T_amb= 25 C; typical values at V_CC= 3.3 V; Z_S= Z_L= 75 ; R_bias= 18 ; 40 MHz  f₁ 1000 MHz.

Symbol Parameter

Conditions

Min Typ Max Unit

V_CC

supply voltage

RF input AC coupled

3.1 3.3 3.5

I_CC(tot)

s₂₁²

SL_sl

total supply current

insertion power gain

slope straight line

flatness of frequency response

noise figure

1

0.2

2.8

dBm

RL_in

RL_out

P_L(1dB)

input return loss

output return loss

output power at 1 dB gain

compression

1 GHz

[1]

IP3_O

output third-order intercept point

dBm

[1] The fundamental frequency (f₁) is 1000 MHz. The intermodulation product (IM3) is 2  f₂ f₁, where

f₂= f₁ 1 MHz. Input power P_i= 10 dBm.

BGU7044

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 1 — 2 January 2012

3 of 10

1 234 5 6 7...10

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