BGU7044
NXP Semiconductors
1 GHz wideband low-noise amplifier
1.4 Quick reference data
Table 1.
Quick reference data
Tamb = 25 C; typical values at VCC = 3.3 V; ZS = ZL = 75 ; Rbias = 18 ; 40 MHz f1 1000 MHz.
Symbol Parameter
Conditions
Min Typ Max Unit
VCC
supply voltage
RF input AC coupled
3.1 3.3 3.5
V
ICC(tot)
Tamb
NF
total supply current
ambient temperature
noise figure
30
34 38
mA
40
-
+85 C
-
-
2.8
13
-
-
dB
PL(1dB)
output power at 1 dB gain
compression
1 GHz
dBm
[1]
IP3O
output third-order intercept point
-
29
-
dBm
[1] The fundamental frequency (f1) is 1000 MHz. The intermodulation product (IM3) is 2 f2 f1, where
f2 = f1 1 MHz. Input power Pi = 10 dBm.
2. Pinning information
Table 2.
Pinning
Pin
1
Description
RF_OUT
VCC
Simplified outline
Graphic symbol
6
5
4
3
2
2
3
n.c.
6
1
4
n.c.
1
2
3
5
4
5
GND
sym141
6
RF_IN
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
plastic surface-mounted package; 6 leads
Version
BGU7044
SOT363
4. Marking
Table 4.
Marking
Type number
BGU7044
Marking code
LJ*
Description
* = p : made in Hong Kong
* = W : made in China
* = t : made in Malaysia
BGU7044
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 2 January 2012
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