BGD704N

更新时间： 2024-02-21 00:21:19

品牌	Logo	应用领域
恩智浦 - NXP		射频和微波射频放大器微波放大器有线电视
页数	文件大小	规格书
8页	57K
描述
CATV amplifier module

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技术参数
数据手册

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BGD704N 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.72	Is Samacsys：	N
最高工作温度：	100 °C	最低工作温度：	-20 °C
封装主体材料：	PLASTIC/EPOXY	封装等效代码：	SOT-115J
电源：	24 V	子类别：	RF/Microwave Amplifiers
最大压摆率：	435 mA	技术：	HYBRID
Base Number Matches：	1

BGD704N 数据手册

Philips Semiconductors

Product speciﬁcation

CATV ampliﬁer module

BGD704N

CHARACTERISTICS

Table 1 Bandwidth 40 to 750 MHz; V_B= 24 V; T_mb= 35 °C; Z_S= Z_L= 75 Ω

SYMBOL

PARAMETER

power gain

CONDITIONS

MIN.

19.5

MAX.

20.5

UNIT

G_p

f = 50 MHz

f = 750 MHz

−

deg

S₁₁

slope cable equivalent

ﬂatness of frequency response

input return losses

f = 40 to 750 MHz

f = 40 to 80 MHz

f = 80 to 160 MHz

f = 160 to 320 MHz

f = 320 to 640 MHz

f = 640 to 750 MHz

f = 40 to 80 MHz

f = 80 to 160 MHz

f = 160 to 320 MHz

f = 320 to 640 MHz

f = 640 to 750 MHz

f = 50 MHz

−

±0.25

−45

−

S₂₂

output return losses

−

S₂₁

phase response

+45

−57

CTB

composite triple beat

110 channels ﬂat; V_o= 44 dBmV;

measured at 745.25 MHz

X_mod

CSO

cross modulation

110 channels ﬂat; V_o= 44 dBmV;

measured at 55.25 MHz

−

−61

−56

composite second order distortion 110 channels ﬂat; V_o= 44 dBmV;

measured at 746.5 MHz

d₂

V_o

second order distortion

output voltage

note 1

−

−66

−

d_im= −60 dB; note 2

f = 50 MHz

f = 450 MHz

f = 550 MHz

f = 600 MHz

f = 750 MHz

note 3

60.5

−

dBmV

noise ﬁgure

−

6.5

−

8.5

435

I_tot

total current consumption (DC)

−

Notes

1. f_p= 55.25 MHz; V_p= 44 dBmV;

f_q= 691.25 MHz; V_q= 44 dBmV;

measured at f_p+ f_q= 746.5 MHz.

2. Measured according to DIN45004B:

f_p= 740.25 MHz; V_p= V_o;

f_q= 747.25 MHz; V_q= V_o−6 dB;

f_r= 749.25 MHz; V_r= V_o−6 dB;

measured at f_p+ f_q− f_r= 738.25 MHz.

3. The module normally operates at V_B= 24 V, but is able to withstand supply transients up to 30 V.

1998 Feb 02

1 234 5 6 7 8

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