BGA7124
NXP Semiconductors
400 MHz to 2700 MHz 1/4 W high linearity Si amplifier
Table 9.
Characteristics at VCC = 3.3 V
ZS = ZL = 50 Ω, SHDN = VI(D)H(SHDN) (shutdown disabled). Typical values at VCC = 3.3 V; Tcase = 25 °C, NXP application
circuit; unless otherwise specified.
Symbol
Parameter
frequency
gain power
Conditions
Min Typ
Max
Unit
[1]
[2][3]
[2][3]
[2][3]
[2][3]
[2][3]
[2][3]
[2][3]
[2][3]
[2][3][4]
[2][3][4]
[2][3][4]
[2][3][4]
[2][3][5]
[2][3][5]
[2][3][5]
[2][3][5]
[3]
f
400
-
2700 MHz
Gp
f = 900 MHz
f = 1900 MHz
f = 2140 MHz
f = 2450 MHz
f = 900 MHz
f = 1900 MHz
f = 2140 MHz
f = 2450 MHz
f = 900 MHz
f = 1900 MHz
f = 2140 MHz
f = 2450 MHz
f = 900 MHz
f = 1900 MHz
f = 2140 MHz
f = 2450 MHz
f = 900 MHz
f = 1900 MHz
f = 2140 MHz
f = 2450 MHz
f = 900 MHz
f = 1900 MHz
f = 2140 MHz
f = 2450 MHz
VCC = 3.3 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
<tbd>
16
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
dB
dB
<tbd>
<tbd>
<tbd>
23
dB
dB
PL(1dB)
IP3O
NF
output power at 1 dB gain compression
output third-order intercept point
noise figure
dBm
dBm
dBm
dB
<tbd>
<tbd>
<tbd>
36
dBm
dBm
dBm
dB
<tbd>
<tbd>
<tbd>
4.7
dB
dB
<tbd>
<tbd>
<tbd>
<tbd>
<tbd>
<tbd>
<tbd>
<tbd>
<tbd>
<tbd>
175
dB
dB
RLin
RLout
ICC
input return loss
dB
[3]
dB
[3]
dB
[3]
dB
[3]
output return loss
dB
[3]
dB
[3]
dB
[3]
dB
[2][3]
supply current
mA
[1] Operation outside this range is possible but parameters are not guaranteed.
[2] Defined across VCC = 3.0 V to 3.6 V; Tcase = −40 °C to +85 °C.
[3] Applicable to class-A operation; ICq = 175 mA.
[4]
Po(tone) = 8 dBm; tone spacing = 10 MHz, f1 = 850 MHz to 1000 MHz; f2 = 1800 MHz to 2400 MHz; higher IMD3 product.
[5] Defined at PIN = −40 dBm; small signal conditions.
10. Reliability information
Table 10. Reliability
Life test Conditions
Intrinsic failure rate
HTOL
confidence level 60 %; Tj = 55 °C; activation energy = 0.7 eV; acceleration factor
XX
determined by Arrhenius
BGA7124_1
© NXP B.V. 2009. All rights reserved.
Objective data sheet
Rev. 00.07 — 16 July 2009
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