BGA7027
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
Table 7.
Characteristics …continued
Input and output impedances matched to 50 Ω. Typical values at VCC = 5 V; Tcase = 25 °C, NXP
application circuit; unless otherwise specified.
Symbol Parameter
Conditions
f = 940 MHz
f = 1960 MHz
f = 2140 MHz
f = 940 MHz
f = 1960 MHz
f = 2140 MHz
f = 940 MHz
f = 1960 MHz
f = 2140 MHz
f = 940 MHz
f = 1960 MHz
f = 2140 MHz
Min
Typ
42
Max
Unit
dBm
dBm
dBm
dB
[3]
[3]
[3]
IP3O
NF
output third-order intercept point
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
43
43
noise figure
2.5
3.5
3.8
−15
−8
dB
dB
[2]
[2]
[2]
[2]
[2]
[2]
RLin
RLout
input return loss
output return loss
dB
dB
−8
dB
−11
−19
−22
dB
dB
dB
[1] Operation outside this range is possible but not guaranteed.
[2] Defined at Pi(RF) = −40 dBm; small signal conditions.
[3] PL= 17 dBm per tone; spacing = 1 MHz.
9. Scattering parameters
Table 8.
Scattering parameters at 5 V, MMIC only
VCC = 5 V; ICC = 180 mA; Tcase = 25 °C.
f (MHz)
s11
s21
s12
s22
Magnitude Angle
(degree)
Magnitude Angle
Magnitude Angle
Magnitude Angle
(ratio)
0.92
0.92
0.92
0.92
0.92
0.92
0.92
0.92
0.92
0.92
0.93
0.93
0.93
0.93
0.94
0.94
0.94
(degree)
(ratio)
8.03
6.55
5.55
4.80
4.24
3.80
3.46
3.14
2.85
2.61
2.39
2.20
2.03
1.88
1.75
1.64
1.53
(degree)
(ratio)
0.01
0.01
0.02
0.02
0.02
0.02
0.03
0.03
0.03
0.03
0.03
0.03
0.04
0.04
0.04
0.04
0.04
(degree)
(ratio)
0.76
0.75
0.75
0.75
0.75
0.75
0.76
0.76
0.76
0.76
0.77
0.78
0.78
0.79
0.80
0.80
0.80
400
178
176
173
171
168
165
162
160
157
154
152
150
149
148
147
146
146
93
89
85
82
79
76
72
69
66
63
61
58
56
54
63
51
50
49
53
55
56
56
56
55
54
53
52
50
49
48
47
47
46
46
−176
−178
179
177
175
173
170
167
165
163
161
160
159
157
157
157
157
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
BGA7027
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Preliminary data sheet
Rev. 1 — 11 August 2010
4 of 19