BGA7027
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
5. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCC
Parameter
Conditions
Min
Max
5.7
Unit
V
supply voltage
RF input power
case temperature
junction temperature
-
[1]
Pi(RF)
Tcase
Tj
f = 2140 MHz; switched
-
28
dBm
C
40
+85
150
2000
-
-
C
VESD
electrostatic discharge Human Body Model (HBM);
V
voltage
according to
JEDEC standard 22-A114E
Charged Device Model (CDM);
according to
-
500
V
JEDEC standard 22-C101B
[1] Withstands switching between zero and maximum Pi(RF)
6. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Typ
Unit
Rth(j-c)
thermal resistance from junction to case
Tcase = 85 C; VCC = 5 V;
38
K/W
ICC = 165 mA
7. Static characteristics
Table 6.
Static characteristics
Input and output impedances matched to 50 . Typical values at Tcase = 25 C,
unless otherwise specified.
Symbol
VCC
Parameter
Conditions
Min Typ Max
5.0
140 165 190
Unit
supply voltage
supply current
-
-
V
ICC
VCC = 5.0 V
mA
8. Dynamic characteristics
Table 7.
Dynamic characteristics
Input and output impedances matched to 50 . Typical values at VCC = 5 V; Tcase = 25 C, NXP
application circuit; unless otherwise specified.
Symbol Parameter
Conditions
Min
400
-
Typ
-
Max
Unit
[1]
[2]
[2]
[2]
f
frequency
2700 MHz
Gp
power gain
f = 940 MHz
f = 1960 MHz
f = 2140 MHz
19.0
11.5
-
-
dB
dB
dB
-
9.0
11.0 13.0
BGA7027
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 26 November 2010
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