BGA7024
NXP Semiconductors
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
Table 7.
Dynamic characteristics …continued
Input and output impedances matched to 50 . Typical values at VCC = 5 V; Tcase = 25 C; see
Section 12 “Application information”; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
PL(1dB)
IP3O
NF
output power at 1 dB gain compression
f = 940 MHz
f = 1960 MHz
f = 2140 MHz
f = 2445 MHz
f = 940 MHz
f = 1960 MHz
f = 2140 MHz
f = 2445 MHz
f = 940 MHz
f = 1960 MHz
f = 2140 MHz
f = 2445 MHz
f = 940 MHz
f = 1960 MHz
f = 2140 MHz
f = 2445 MHz
f = 940 MHz
f = 1960 MHz
f = 2140 MHz
f = 2445 MHz
-
-
24
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
25.5
24.0 25.5
-
-
-
24.5
37.5
38.0
[2]
[2]
[2]
[2]
[3]
[3]
[3]
[3]
output third-order intercept point
35.0 38.0
-
-
-
-
-
-
-
-
-
-
-
-
-
37.5
2.9
noise figure
3.7
dB
3.7
dB
4.0
dB
RLin
input return loss
9
dB
10
10
14
29
22
29
11
dB
dB
dB
RLout
output return loss
dB
dB
dB
dB
[1] Operation outside this range is possible but not guaranteed.
[2] PL = 11 dBm per tone; spacing = 1 MHz.
[3] Defined at Pi(RF) = 40 dBm; small signal conditions.
9. Scattering parameters
Table 8.
f (MHz) S11
Magnitude
Scattering parameters at 5 V, MMIC only
S21
S12
S22
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(ratio)
0.83
0.85
0.85
0.86
0.86
0.86
0.86
0.87
0.88
0.88
(degree)
166.3
168.9
172.2
174.8
177.4
179.7
400
500
178.9
178.7
176.4
173.8
171.1
168.3
165.4
162.7
159.9
157.3
14.03
11.69
9.93
8.67
7.68
6.9
112.7
104.4
98.19
93.04
88.54
84.36
80.24
76.42
72.83
69.34
0.01
0.01
0.02
0.02
0.02
0.02
0.02
0.02
0.02
0.03
35.5
0.53
0.56
0.57
0.58
0.58
0.59
0.60
0.60
0.60
0.61
38.77
41.13
43.1
600
700
800
44.34
44.96
45.07
45
900
1000
1100
1200
1300
BGA7024
6.29
5.72
5.23
4.80
176.7
173.3
44.54
44.17
170.9
168.4
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© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 11 June 2014
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