BGA7024
NXP Semiconductors
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
5. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCC(RF)
Pi(RF)
Tcase
Tj
Parameter
Conditions
Min
Max
5.7
Unit
V
RF supply voltage
RF input power
-
-
25
dBm
C
case temperature
junction temperature
electrostatic discharge voltage
40
+85
150
2000
-
-
C
VESD
Human Body Model (HBM);
V
according to JEDEC standard 22-A114E
Charged Device Model (CDM);
-
500
V
according to JEDEC standard 22-C101B
6. Thermal characteristics
Table 5.
Symbol
Rth(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
Typ Unit
[1][2]
25
K/W
[1] Case is ground solder pad.
[2] Thermal resistance measured using infrared measurement technique, device mounted on application board
and placed in still air.
7. Static characteristics
Table 6.
Characteristics
Input and output impedances matched to 50 . Typical values at VCC = 5 V; Tcase = 25 C; unless
otherwise specified.
Symbol
VCC
Parameter
Conditions
Min Typ Max
Unit
V
supply voltage
supply current
-
5.0
-
ICC
95
110
125
mA
8. Dynamic characteristics
Table 7.
Dynamic characteristics
Input and output impedances matched to 50 . Typical values at VCC = 5 V; Tcase = 25 C; see
Section 12 “Application information”; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
[1]
f
frequency
400
-
2700 MHz
Gp
power gain
f = 940 MHz
f = 1960 MHz
f = 2140 MHz
f = 2445 MHz
-
-
22
16
-
-
dB
dB
13.5 15
14
16.5 dB
dB
-
-
BGA7024
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© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 11 June 2014
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