BFW43

更新时间： 2024-11-19 22:27:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		放大器高压
页数	文件大小	规格书
5页	62K
描述
HIGH VOLTAGE AMPLIFIER

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中文翻译

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BFW43 数据手册

BFW43

HIGH VOLTAGE AMPLIFIER

DESCRIPTION

The BFW43 is a silicon planar epitaxial PNP

transistors in Jedec TO-18 metal case. It is

designed for use in amplifiers where high voltage

and high gain are necessary. In particular, its

feature a V_CEOof 150V are specified over a wide

range of curent.

TO-18

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage (I_E= 0)

Collector-Emitter Voltage (I_B= 0)

Emitter-Base Voltage (I_C= 0)

Collector Current

Value

-150

-6

Unit

-0.1

P_tot

Total Dissipation at T_amb≤ 25 ^oC

0.4

1.4

at T_case≤ 25 ^oC

T_stg

T_j

Storage Temperature

-55 to 200

200

^oC

Max. Operating Junction Temperature

1/5

November 1997

12 3 4 5

中文翻译

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