是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | not_compliant |
风险等级: | 5.92 | 最大集电极电流 (IC): | 1 A |
配置: | Single | 最高工作温度: | 175 °C |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.8 W |
子类别: | Other Transistors | 表面贴装: | NO |
标称过渡频率 (fT): | 60 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BFT61 | SEME-LAB |
获取价格 |
Bipolar PNP Device in a Hermetically sealed TO39 | |
BFT62 | SEME-LAB |
获取价格 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. | |
BFT62M0JF08 | VISHAY |
获取价格 |
RESISTOR, CARBON FILM, 6 W, 5 %, 62000000 ohm, CHASSIS MOUNT | |
BFT65 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 50MA I(C) | MACRO-T | |
BFT66 | INFINEON |
获取价格 |
EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS | |
BFT67 | INFINEON |
获取价格 |
EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS | |
BFT69 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-18 | |
BFT70 | ETC |
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TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-18 | |
BFT71 | TI |
获取价格 |
BFT71 | |
BFT75 | INFINEON |
获取价格 |
NPN SILICON RF BROADBAND TRANSISTOR |