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BFS20

更新时间: 2024-11-25 08:52:43
品牌 Logo 应用领域
商升特 - SEMTECH 晶体晶体管光电二极管放大器
页数 文件大小 规格书
1页 82K
描述
NPN Silicon Epitaxial Planar Transistor

BFS20 数据手册

  
BFS20  
NPN Silicon Epitaxial Planar Transistor  
High frequency transistor for IF and VHF applications  
SOT-23 Plastic Package  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Symbol  
Value  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
IC  
30  
V
V
20  
4
25  
V
mA  
mW  
Power Dissipation  
Ptot  
Tj  
200  
O
C
Junction Temperature  
Storage Temperature Range  
150  
O
C
TS  
- 65 to + 150  
O
Characteristics at Ta = 25 C  
Parameter  
Symbol  
Min.  
40  
Typ.  
-
Max.  
140  
Unit  
DC Current Gain  
hFE  
ICBO  
IEBO  
VBE  
fT  
-
nA  
µA  
V
at VCE = 10 V, IC = 7 mA  
Collector Cutoff Current  
at VCB = 20 V  
-
-
100  
100  
0.9  
-
Emitter Cutoff Current  
at VEB = 4 V  
-
-
-
Base Emitter Voltage  
-
275  
-
at VCE = 10 V, IC = 7 mA  
Transition Frequency  
450  
1
MHz  
pF  
at VCE = 10 V, IC = 5 mA, f = 100 MHz  
Collector Base Capacitance  
at VCB = 10 V, f = 1 MHz  
COB  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 11/11/2006  

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