RECTRON
TECHNICAL SPECIFICATION
SEMICONDUCTOR
BFS20
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
FEATURES
* Power dissipation
PCM :
0.25
W (Tamb=25OC)
* Collector current
ICM :
0.025
A
* Collector-base voltage
30
V
:
V
(BR)CBO
SOT-23
* Operating and storage junction temperature range
T ,Tstg: -55OC to +150OC
J
COLLECTOR
3
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
0.055(1.40)
0.047(1.20)
BASE
1
2
EMITTER
0.006(0.15)
0.003(0.08)
0.043(1.10)
0.035(0.90)
0.020(0.50)
0.012(0.30)
0.004(0.10)
0.000(0.00)
* Weight: 0.008 gram
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
1
2
0.019(2.00)
0.071(1.80)
0.118(3.00)
0.110(2.80)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified.
Single phase , half wave, 60HZ, resistive or inductive load.
For capacitive load, derate current by 20%.
3
Dimensions in inches and (millimeters)
O
ELECTRICAL CHARACTERISTICS ( @ TA = 25 C unless otherwise noted )
MAX
-
TYP
-
CHARACTERISTICS
Collector-base breakdown voltage (I = 100µA, I =0)
SYMBOL
UNITS
MIN
30
V
V
V
(BR)CBO
C
E
V
-
-
-
-
Collector-emitter breakdown voltage (I = 100µA, I =0)
(BR)CEO
20
C
B
Emitter-base breakdown voltage (I = 100µA, I =0)
V
(BR)EBO
E
C
V
4
-
-
-
Collector cut-off current (V = 20V, I =0)
I
0.1
0.1
0.1
120
0.3
0.9
-
µA
µA
µA
-
CB
E
CBO
-
-
Collector cut-off current (V = 15V, I =0)
I
CEO
CE
C
-
-
Collector cut-off current (V = 4V, I =0)
I
EBO
EB
C
DC current gain (V = 10V, I = 7mA)
h
FE
CE
C
40
-
V
-
-
CE(sat)
Collector-emitter saturation voltage (I = 10mA, I = 1mA)
V
C
B
V
BE(on)
-
Base - emitter voltage (I = 7mA, VCE= 10V)
C
V
275
-
Transition frequency (V = 10V, I = 5mA, f=100MHZ)
fT
MHz
CE
C
Marking
G11
Note 1: "Fully ROHS compliant", "100% Sn plating (Pb-free)".
2006-3