BFR93ALT1

更新时间： 2024-09-24 22:24:31

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管射频
页数	文件大小	规格书
2页	58K
描述
RF TRANSISTORS NPN SILICON

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BFR93ALT1 数据手册

Order this document

by BFR93ALT1/D

SEMICONDUCTOR TECHNICAL DATA

The RF Line

Designed primarily for use in high–gain, low–noise, small–signal UHF and

microwave amplifiers constructed with thick and thin–film circuits using surface

mount components.

•

T1 Suffix Indicates Tape and Reel Packaging of 3,000 Units per Reel.

RF TRANSISTORS

NPN SILICON

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

mAdc

°C

Collector–Emitter Voltage

Collector–Base Voltage

CEO

CBO

EBO

Emitter–Base Voltage

2.0

Collector Current — Continuous

Maximum Junction Temperature

Jmax

150

Power Dissipation, T

Derate linearly above T

case

= 75°C (2)

= 75°C @

0.306

4.08

mW/°C

case

D(max)

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

–55 to +150

245

Unit

°C

Storage Temperature

stg

Thermal Resistance Junction to Case

°C/W

θJC

CASE 318–08, STYLE 6

SOT–23

DEVICE MARKING

LOW PROFILE

BFR93ALT1 = R2

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Collector–Emitter Breakdown Voltage (1)

(I = 10 mA)

—

Vdc

(BR)CEO

Collector–Base Breakdown Voltage

(I = 10 µA)

(BR)CBO

Emitter–Base Breakdown Voltage

(I = 100 µA)

2.0

(BR)EBO

Collector Cutoff Current (V

= 10 V)

—

CEO

Collector Cutoff Current (V

CBO

ON CHARACTERISTICS

DC Current Gain (1)

(I = 30 mA, V

C CE

—

= 5.0 V)

Collector–Emitter Saturation Voltage (1)

(I = 35 mA, I = 7.0 mA)

0.5

1.2

Vdc

CE(sat)

BE(sat)

Base–Emitter Saturation Voltage (1)

(I = 35 mA, I = 7.0 mA)

NOTES:

1. Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.

2. Case temperature measured on collector lead immediately adjacent to body of package.

REV 7

MOTOROLA RF DEVICE DATA

Motorola, Inc. 1995

BFR93ALT1

中文翻译

下载PDF

与BFR93ALT1相关器件

型号	品牌	获取价格	描述	数据表
BFR93ALT3	MOTOROLA	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Silicon, NPN, CASE 318-07, 3 P
BFR93AR	NXP	获取价格	NPN 6 GHz wideband transistor
BFR93AR	VISHAY	获取价格	Silicon NPN Planar RF Transistor
BFR93AR,215	NXP	获取价格	NPN 6 GHz wideband transistor TO-236 3-Pin
BFR93AR_15	JMNIC	获取价格	NPN 6 GHz wideband transistor
BFR93AR_2015	JMNIC	获取价格	NPN 6 GHz wideband transistor
BFR93ARGELB-GS08	VISHAY	获取价格	Transistor,
BFR93AR-T1	ETC	获取价格	The RF Line NPN Silicon High-Frequency Transistor
BFR93AR-T3	ETC	获取价格	The RF Line NPN Silicon High-Frequency Transistor
BFR93AT	NXP	获取价格	NPN 5 GHz wideband transistor