Datasheet > BFR93AR_15

BFR93AR_15

更新时间： 2024-09-26 01:20:39

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
13页	95K
描述
NPN 6 GHz wideband transistor

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BFR93AR_15 数据手册

BFR93AR

NPN 6 GHz wideband transistor

Rev. 01 — 30 November 2006

Product data sheet

1. Product proﬁle

1.1 General description

NPN wideband transistor in a plastic SOT23 package.

PNP complement: BFT93.

1.2 Features

I Very high power gain

I Low noise ﬁgure

I Very low intermodulation distortion

1.3 Applications

I RF wideband ampliﬁers and oscillators

1.4 Quick reference data

Table 1.

Quick reference data

Symbol Parameter

Conditions

open emitter

Min Typ Max Unit

V_CBO

V_CEO

I_C

collector-base voltage

collector-emitter voltage open base

collector current

P_tot

C_re

f_T

total power dissipation

feedback capacitance

transition frequency

T_sp≤ 95 °C

300 mW

I_C= 0 mA; V_CE= 5 V; f = 1 MHz;

0.6

I_C= 30 mA; V_CE= 5 V;

f = 500 MHz;

GHz

G_UM

unilateral power gain

I_C= 30 mA; V_CE= 8 V;

_amb= 25 °C

f = 1 GHz

f = 2 GHz

V_O

noise ﬁgure

I_C= 5 mA; V_CE= 8 V; f = 1 GHz;

Γ_S= Γ_opt; T_amb= 25 °C

1.9

output voltage

IMD = −60 dB; I_C= 30 mA;

425

_CE= 8 V; R_L= 75 Ω;

_amb= 25 °C;

f_p+ f_q− f_r= 793.25 MHz

12 3 4 5 6 7...13

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