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BFR93ARGELB-GS08 PDF预览

BFR93ARGELB-GS08

更新时间: 2024-09-25 19:57:55
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 241K
描述
Transistor,

BFR93ARGELB-GS08 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.8最大集电极电流 (IC):0.05 A
配置:Single最小直流电流增益 (hFE):40
JESD-609代码:e3最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):0.2 W
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)Base Number Matches:1

BFR93ARGELB-GS08 数据手册

 浏览型号BFR93ARGELB-GS08的Datasheet PDF文件第2页浏览型号BFR93ARGELB-GS08的Datasheet PDF文件第3页浏览型号BFR93ARGELB-GS08的Datasheet PDF文件第4页浏览型号BFR93ARGELB-GS08的Datasheet PDF文件第5页浏览型号BFR93ARGELB-GS08的Datasheet PDF文件第6页浏览型号BFR93ARGELB-GS08的Datasheet PDF文件第7页 
Not for new design, this product will be obsoleted soon  
BFR93A/BFR93AR/BFR93AW  
Vishay Semiconductors  
Silicon NPN Planar RF Transistor  
1
1
SOT23  
Features  
• High power gain  
• High transition frequency  
e3  
• Low noise figure  
2
3
2
• Lead (Pb)-free component  
SOT23  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
3
2
1
Applications  
• Wide band amplifier up to GHz range  
SOT323  
3
19150  
Electrostatic sensitive device.  
Mechanical Data  
Typ: BFR93A  
Observe precautions for handling.  
Case: SOT23 Plastic case  
Weight: approx. 8.0 mg  
Marking: + R2  
Typ: BFR93AW  
Pinning: 1 = Collector, 2 = Base, 3 = Emitter  
Typ: BFR93AR  
Case: SOT23 Plastic case  
Weight: approx. 8.0 mg  
Case: SOT323 Plastic case  
Weight: approx. 8.0 mg  
Marking: WR2  
Pinning: 1 = Collector, 2 = Base, 3 = Emitter  
Marking: + R5  
Pinning: 1 = Collector, 2 = Base, 3 = Emitter  
Parts Table  
Part  
Ordering Code  
BFR93AGELB-GS08  
BFR93ARGELB-GS08  
BFR93AW-GS08  
Type Marking  
+ R2  
Remarks  
Package  
SOT23  
BFR93A  
Tape and Reel  
Tape and Reel  
Tape and Reel  
BFR93AR  
BFR93AW  
+ R5  
SOT23  
WR2  
SOT323  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Test condition  
Symbol  
VCBO  
Value  
Unit  
V
20  
VCEO  
VEBO  
IC  
12  
V
2
50  
V
mA  
mW  
°C  
°C  
Tamb 60 °C  
Ptot  
Tj  
Total power dissipation  
Junction temperature  
Storage temperature range  
200  
150  
Tstg  
- 65 to + 150  
Document Number 85035  
Rev. 1.6, 08-Sep-08  
www.vishay.com  
1

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