Datasheet > BFR92W_07

BFR92W_07

更新时间： 2024-10-01 12:20:19

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
7页	140K
描述
NPN Silicon RF Transistor

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中文翻译

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数据手册

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BFR92W_07 数据手册

BFR92W

NPN Silicon RF Transistor*

• For broadband amplifiers up to 2 GHz and

fast non-saturated switches at collector currents

from 0.5 mA to 20 mA

• Complementary type: BFT92W (PNP)

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

* Short term description

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFR92W

Marking

P1s

Pin Configuration

Package

SOT323

1=B

2=E

3=C

Maximum Ratings

Parameter

Symbol

Value

Unit

2.5

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CEO

CES

CBO

EBO

°C

Base current

Total power dissipation

280

tot

T ≤ 86 °C

150

-65 ... 150

Junction temperature

Ambient temperature

Storage temperature

stg

Thermal Resistance

Parameter

Junction - soldering point

Symbol

Value

≤ 230

Unit

K/W

thJS

¹Pb-containing package may be available upon special request

²T is measured on the collector lead at the soldering point to the pcb

³For calculation of R

please refer to Application Note Thermal Resistance

thJA

2007-03-30

12 3 4 5 6 7

中文翻译

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