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BFR340L3E6327XTMA1 PDF预览

BFR340L3E6327XTMA1

更新时间: 2024-11-15 15:46:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
6页 580K
描述
RF Small Signal Bipolar Transistor,

BFR340L3E6327XTMA1 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:1.65
JESD-609代码:e4湿度敏感等级:1
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:Gold (Au)
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BFR340L3E6327XTMA1 数据手册

 浏览型号BFR340L3E6327XTMA1的Datasheet PDF文件第2页浏览型号BFR340L3E6327XTMA1的Datasheet PDF文件第3页浏览型号BFR340L3E6327XTMA1的Datasheet PDF文件第4页浏览型号BFR340L3E6327XTMA1的Datasheet PDF文件第5页浏览型号BFR340L3E6327XTMA1的Datasheet PDF文件第6页 
BFR340L3  
Low Noise Silicon Bipolar RF Transistor  
Low voltage/ Low current operation  
Transition frequency of 14 GHz  
High insertion gain  
Ideal for low current amplifiers and oscillators  
Pb-free (RoHS compliant) and halogen-free thin small  
leadless package  
Qualification report according to AEC-Q101 available  
ESD (Electrostatic discharge) sensitive device, observe handling precaution!  
Type  
BFR340L3  
Marking  
FA  
Pin Configuration  
2 = E 3 = C  
Package  
TSLP-3-1  
1 = B  
Maximum Ratings at T = 25 °C, unless otherwise specified  
A
Parameter  
Symbol  
Value  
6
15  
15  
2
10  
2
60  
Unit  
V
Collector-emitter voltage  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
V
CEO  
CES  
CBO  
EBO  
mA  
mW  
°C  
I
C
Base current  
Total power dissipation  
I
B
1)  
P
tot  
T 120°C  
S
150  
-55 ... 150  
Junction temperature  
Storage temperature  
T
J
T
Stg  
Thermal Resistance  
Parameter  
Junction - soldering point  
Symbol  
Value  
500  
Unit  
K/W  
2)  
R
thJS  
1
T is measured on the collector lead at the soldering point to the pcb  
S
2
For the definition of R  
please refer to Application Note AN077 (Thermal Resistance Calculation)  
thJS  
2013-09-03  
1

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