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BF199

更新时间: 2024-01-27 10:46:31
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体小信号双极晶体管射频小信号双极晶体管放大器
页数 文件大小 规格书
6页 148K
描述
RF Transistor

BF199 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.74
最大集电极电流 (IC):0.1 A基于收集器的最大容量:0.35 pF
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):40最高频带:VERY HIGH FREQUENCY BAND
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN功耗环境最大值:1 W
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):750 MHzBase Number Matches:1

BF199 数据手册

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Order this document  
by BF199/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
COLLECTOR  
1
3
BASE  
2
EMITTER  
MAXIMUM RATINGS  
1
2
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
25  
Unit  
3
V
CEO  
V
CBO  
V
EBO  
Vdc  
Vdc  
CASE 29–04, STYLE 21  
TO–92 (TO–226AA)  
40  
4.0  
Vdc  
Collector Current — Continuous  
I
C
100  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
350  
2.8  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.0  
8.0  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
357  
125  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Typ  
Max  
Unit  
CollectorEmitter Breakdown Voltage  
V
V
Vdc  
Vdc  
(BR)CEO  
(I = 1.0 mAdc, I = 0)  
25  
40  
4.0  
C
B
CollectorBase Breakdown Voltage  
(I = 100 Adc, I = 0)  
(BR)CBO  
C
E
EmitterBase Breakdown Voltage  
(I = 10 Adc, I = 0)  
V
Vdc  
(BR)EBO  
E
C
Collector Cutoff Current  
(V = 20 Vdc, I = 0)  
I
nAdc  
CBO  
100  
CB  
E
Motorola, Inc. 1996

BF199 替代型号

型号 品牌 替代类型 描述 数据表
BFS17 VISHAY

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